Abstract: Co/Cu/Co film and Ta/Co/Cu/Co film with buffer layer was prepared on Si/SiO2 substrate by DC magnetron sputtering method. The microstructure, surface morphology, texture and interlayer interdiffusion phenomenon of the film were investigated by scanning electron microscope, atomic force microscope, X-ray diffraction and Auger electron energy spectrum. The experimental results indicated that {111} and {002} diffracation peaks were observed during annealing in both kinds of the Co/Cu/Co film. Stronger {111} diffracation peaks and {111} fibre texture exited in Ta/Co/Cu/Co multilayers than SiO2/Co/Cu/Co multilayers. Addition of Ta buffer decreased the hole density and the roughness of the film. Furthermore, interdiffusion of Co and Cu occured at the interface, as a result the film lamellar structure was destroyed. The addition of Ta buffer increased the wettability between Co/Cu/Co film and substrate, led to an improvement of microstructure and decreased the interface interdiffusion.
彭晓文, 陈冷. 缓冲层Ta对退火Co/Cu/Co薄膜微观结构和界面互扩散的影响[J]. 材料导报, 2018, 32(22): 3931-3935.
PENG Xiaowen, CHEN Leng. Effect of Ta Buffer on Microstructure and Interdiffusion of Annealed Co/Cu/Co Film. Materials Reports, 2018, 32(22): 3931-3935.
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2018, Vol. 32 
