Photovoltaic Characteristics of Cu2ZnSn(SxSe1-x)4 Thin Films Synthesizedvia the Process of Cu-Zn-Sn Presputtering and SubsequentSulfurization (Selenization) Annealing
LIU Yike1, TANG Yaqin1, JIANG Liangxing2, LIU Fangyang2, QIN Qin2, ZHANG Kun3
1 School of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang 550003; 2 School of Metallurgy and Environment, Central South University, Changsha 410083; 3 Gem Incorporated Company, Shenzhen 518101
Abstract: By applying several annealing schemes (sulfurization, selenization, sulfurization at various temperatures→selenization) to the annealing process of the magnetron sputtered Cu-Zn-Sn coating, this work made a successful attempt to develop an annealing scheme that enables the production of CZTSSe thin film on the basis of merely a presputtered metallic coating. We conducted the morphological analyses upon the Cu2ZnSn(SxSe1-x)4 films formed through different annealing schemes and revealed that a relatively low sulfurization temperatures can benefit the flatness and densification of the resultant film by attenuating the heat-induced porosification effect. A comparative study was then carried out upon the effect of the sulfurization temperature (200 ℃, 300 ℃, 400 ℃, 500 ℃) on the properties of Cu2ZnSn(SxSe1-x)4 thin films, by measuring the films’ composition, morphology, structure and crystallinity via XRF, SEM, XRD and Raman scattering. Among the above competitors, the Cu2ZnSn(SxSe1-x)4 film obtained with 300 ℃ sulfurization→selenization exhibits the most favorable morphology and crystallinity, as well as a power conversion efficiency of 2.09% which far outperforms the one with 500 ℃ sulfurization→selenization (0.94%) owing to the boost of short-circuit current and fill factor.
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2018, Vol. 32 
