Research Progress in Chemical-Mechanical Polishing of IC Interconnect Metals and Their Barrier Layers
LI Wenhaoyu1,2,3, GAO Baohong1,2,3,*, HUO Jinxiang1,2,3, HE Bin1,2,3, LIANG Bin1,2,3, LIU Mingyu1,2,3
1 School of Electronic Information Engineering, Hebei University of Technology, Tianjin 300130, China 2 Hebei Collaborative Innovation Center of Microelectronic Materials and Technology in Ultra Precision Processing, Tianjin 300130, China 3 Hebei Engineering Research Center of Microelectronic Materials and Devices, Tianjin 300130, China
Abstract: The progress of integrated circuit can be used as an important indicator to measure the economic strength of a country, so as to reflect the overall strength of the country. Among the many processes of integrated circuit, CMP is one of the key manufacturing technologies, and it is also the only technology that can achieve global and local flattening which is widely used. Chip interconnection is a post-stage process, and the current technologies mainly include copper interconnection and cobalt interconnection. When using these interconnection technologies, the performance of the chip will inevitably be affected, including the metal diffusion problem, the bond strength between the film and the substrate, and so on. We choose to add different barrier layers to solve these problems. Both interconnect metal and barrier layer must undergo CMP process, which directly determines chip yield and reliability. The limitations in the research of CMP interconnection and barrier layer are introduced briefly.In this paper, the materials of various technical joint barrier layers and the substitution of interconnect metals are reviewed.
通讯作者:
*高宝红,河北工业大学电子信息学院副研究员、硕士研究生导师。2004年烟台师范学院物理系专业本科毕业,2007年天津理工大学光学工程专业硕士毕业,2010年河北工业大学微电子学与固体电子学博士毕业后在河北工业大学工作至今。目前主要从事微电子行业工艺及理论研究。发表论文50余篇,包括Journal of Molecular Liquids,Colloids and Surfaces A-Physicochemical and Enginee-ring Aspects等。bh_gao@163.com
李雯浩宇, 高宝红, 霍金向, 贺斌, 梁斌, 刘鸣瑜. IC互连金属及其阻挡层化学机械抛光的研究进展[J]. 材料导报, 2024, 38(16): 23030074-8.
LI Wenhaoyu, GAO Baohong, HUO Jinxiang, HE Bin, LIANG Bin, LIU Mingyu. Research Progress in Chemical-Mechanical Polishing of IC Interconnect Metals and Their Barrier Layers. Materials Reports, 2024, 38(16): 23030074-8.
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2024, Vol. 38 
