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材料导报  2021, Vol. 35 Issue (4): 4034-4037    https://doi.org/10.11896/cldb.19090182
  无机非金属及其复合材料 |
用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备
段鹏1, 彭燕1, 王希玮1, 韩晓桐1, 王笃福2, 胡小波1, 徐现刚1
1 山东大学晶体材料国家重点实验室,济南 250000
2 济南金刚石科技有限公司,济南 250000
Preparing HTHP Diamond with High Surface Quality for MPCVD Diamond Film Growing
DUAN Peng1,PENG Yan1,WANG Xiwei1,HAN Xiaotong1,WANG Dufu2,HU Xiaobo1,XU Xiangang1
1 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250000, China
2 Jinan Diamond Technology Co., Ltd., Jinan 250000, Shandong, China
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摘要 高质量的表面加工是金刚石体块和薄膜生长以及器件制备的关键。本实验利用激光切割块状HTHP金刚石,并采用激光共聚显微镜(LEXT)、拉曼光谱(Raman)及X射线光电子谱(XPS)、电子背散射衍射(EBSD)分析金刚石的表面形貌、抛光过程中表面状态的转化情况,以及抛光后金刚石的表面损伤及结晶质量。经过机械抛光和化学机械抛光,激光切割带来的表面碳化层和损伤层被有效去除,金刚石的表面粗糙度达到0.764 nm。进一步地,通过微波等离子体化学气相沉积(MPCVD)法在HTHP金刚石籽晶上沉积同质薄膜材料,获得生长条纹规则、低应力、拉曼半宽2.1 cm-1、XRD半宽仅为87arcsec的高质量金刚石薄膜。
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段鹏
彭燕
王希玮
韩晓桐
王笃福
胡小波
徐现刚
关键词:  激光切割  化学机械抛光  HTHP金刚石  MPCVD金刚石薄膜    
Abstract: High quality surface processing is the key to diamond bulk and film growth and device fabrication. In this paper, laser-cut HTHP diamond was used, and the surface morphology of diamond after laser cutting was analyzed by Laser Confocal Microscopes (LEXT), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and electron backscatter diffraction (EBSD), the transformation of the state during the polishing process, as well as the surface damage and crystal quality of the polished diamond. After two steps of mechanical polishing and chemical mechanical polishing, the carbonized layer and the damaged layer of the diamond surface are effectively removed by laser cutting, and the surface roughness reaches 0.764 nm. Further, a homogeneous thin film material is deposited on the HTHP diamond seed by a microwave plasma chemical vapor deposition (MPCVD) method to obtain a growth fringe rule, a low stress, a Raman half width of 2.1 cm-1, and a XRD half width of only 87 arcsec. High quality diamond film.
Key words:  laser cutting    chemical mechanical polishing    HTHP seed crystal    MPCVD diamond single crystal
               出版日期:  2021-02-25      发布日期:  2021-02-23
ZTFLH:  TQ163  
基金资助: 国家重点研发计划(2018YFB0406501);山东省自然科学基金重大基础研究项目(ZR2017ZA0101);山东省重点研发计划(2016ZDJS01B03);晶体材料国家重点实验室自主课题
通讯作者:  penny4964@163.com   
作者简介:  段鹏,2017年7月毕业于鲁东大学,获得工学学士学位。于2017年9月进入山东大学晶体材料研究所培养学习,主要从事宽禁带半导体材料的生长与表征。
彭燕,晶体材料国家重点实验室,副教授。2011年6月毕业于山东大学,凝聚态物理博士学位。同年加入晶体材料国家重点实验室工作至今,主要从事宽禁带半导体材料研究工作,重点研究SiC、金刚石材料的制备、表征及应用研究。国内外重要期刊发表论文20余篇,申请发明专利10余项。
引用本文:    
段鹏, 彭燕, 王希玮, 韩晓桐, 王笃福, 胡小波, 徐现刚. 用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备[J]. 材料导报, 2021, 35(4): 4034-4037.
DUAN Peng, PENG Yan, WANG Xiwei, HAN Xiaotong, WANG Dufu, HU Xiaobo, XU Xiangang. Preparing HTHP Diamond with High Surface Quality for MPCVD Diamond Film Growing. Materials Reports, 2021, 35(4): 4034-4037.
链接本文:  
http://www.mater-rep.com/CN/10.11896/cldb.19090182  或          http://www.mater-rep.com/CN/Y2021/V35/I4/4034
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