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材料导报  2022, Vol. 36 Issue (5): 20080191-10    https://doi.org/10.11896/cldb.20080191
  无机非金属及其复合材料 |
非线性晶体和光电材料硒化镓的研究进展
杜辉, 陈巧, 刘婷, 贺毅, 金应荣
西华大学材料科学与工程学院,成都 611700
Research Progress of Nonlinear Crystal and Optoelectronic Material GaSe
DU Hui, CHEN Qiao, LIU Ting, HE Yi, JIN Yingrong
School of Materials Science and Engineering, Xihua University, Chengdu 611700, China
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摘要 中远红外激光和光电器件在军事和民用等领域都有广泛的应用。中远红外非线性光学晶体作为中远红外激光器的核心部件变得越来越重要,而硒化镓(GaSe)正是综合性能优异的中远红外非线性光学晶体。此外,二维GaSe材料凭借其优异的光电性能在光电器件(如光电探测器)等领域也有重要应用。
尽管GaSe有很多优点,在中远红外方面具有巨大的应用前景,但高光学质量大尺寸的GaSe单晶生长技术仍需进一步研究。通过国内外研究者的努力,GaSe的合成和生长方法不断改进。由于Se易挥发,调控GaSe化学计量比十分重要,调控的途径有:(1)通过补充Se蒸汽来平衡Se蒸汽压从而调控GaSe化学计量比;(2)通过限制Se蒸汽的自由空间有效抑制Se的挥发。其次GaSe的硬度较低,难以切割加工,这也是影响其广泛商业化应用的重要原因。在提高GaSe硬度方面,学者们做了大量的掺杂研究,研究发现通过掺杂可有效提高GaSe晶体的硬度,同时还可以提升一定的光学性能。在二维GaSe方面,虽然目前已经通过各种方法制备出了二维GaSe纳米片,并在电子、光电器件等方面有不错的研究成果,如紫外和红外高响应率光电探测器、气敏传感器、柔性光电器件与光电化学型电极等。但获得高质量、大尺寸和厚度可控的二维GaSe材料仍然困难。
本文首先简要介绍了GaSe的结构与性质,然后主要从GaSe块体材料和二维材料两个方面,综述了GaSe材料的制备、掺杂研究、中远红外和太赫兹(THz)波段应用以及在电子器件、光电器件领域的研究进展,最后对GaSe未来研究和应用进行了展望。
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杜辉
陈巧
刘婷
贺毅
金应荣
关键词:  中远红外  硒化镓  非线性光学晶体  光电器件  二维材料    
Abstract: Mid-far infrared lasers and optoelectronic devices are widely used in military and civilian fields. Mid-far infrared nonlinear optical crystals are becoming more and more important as the core component of mid-far infrared lasers, and gallium selenide (GaSe) is a mid-far infrared nonlinear optical crystal with excellent comprehensive performance. In addition, based on their excellent photoelectric properties, it is more importance for two-dimensional GaSe to use in optoelectronic devices (such as photodetectors).
Although GaSe has many advantages and great application prospects in the mid-far infrared, the growth technology of GaSe single crystals with high optical quality and large size still needs further research. Both synthetic and growth methods of GaSe have been continuously improved, through the efforts of domestic and foreign researchers. Since Se is volatile, it is very important to control the stoichiometric ratio of GaSe. The ways of regulation are: (i) adjust the stoichiometric ratio by supplementing Se vapor to balance the Se vapor pressure; (ii) suppress the volatilization of Se by limiting the free space of Se vapor to effectively. Secondly, it is difficult to cut and process for the soft hardness of GaSe, which could account for the important reason that affecting its wide commercial application. To improving the hardness of GaSe, scholars have done a lot of doping research, which could reveal that both the hardness of GaSe crystal and optical performance improved by doping. In terms of two-dimensional GaSe, although two-dimensional GaSe nanometer tablets have been prepared by various methods and good research results have been achieved in electronics, photoelectric devices and other aspects, such as ultraviolet and infrared high responsivity photodetectors, gas sensors, flexible optoelectronic devices and photoelectrochemical electrodes, etc. It is still difficult to obtain two-dimensional GaSe materials with high quality, large size and controllable thickness.
Firstly this article briefly introduces the structure and properties of GaSe. Then, the preparation of GaSe materials, doping research, mid-far infrared and terahertz (THz) band applications, and research progress in the fields of electronic devices and optoelectronic devices are reviewed from the two aspects of GaSe bulk and two-dimensional materials. Finally, the future research and application of GaSe are prospected.
Key words:  mid-far infrared    GaSe    nonlinear optical crystal    optoelectronic device    two-dimensional material
出版日期:  2022-03-10      发布日期:  2022-03-08
ZTFLH:  O782  
  TN29  
基金资助: 教育部春晖计划项目(12201519);四川省科技厅项目(13201657)
通讯作者:  Jinry@mail.xhu.edu.cn   
作者简介:  杜辉,2018年毕业于西华大学微电子科学与工程专业,获得工学学士学位。现为西华大学材料科学与工程学院硕士研究生,师承金应荣研究员和贺毅教授,主要从事光电材料、GaSe单晶生长的研究。
金应荣,西华大学材料科学与工程学院研究员,硕士研究生导师。1985年毕业于重庆大学,获得学士学位;1988年毕业于哈尔滨工业大学,获得硕士学位;2002年毕业于四川大学,获得博士学位。主要从事光电子材料与器件和半导体材料与器件方面的研究工作。
20080191-20080191-
引用本文:    
杜辉, 陈巧, 刘婷, 贺毅, 金应荣. 非线性晶体和光电材料硒化镓的研究进展[J]. 材料导报, 2022, 36(5): 20080191-10.
DU Hui, CHEN Qiao, LIU Ting, HE Yi, JIN Yingrong. Research Progress of Nonlinear Crystal and Optoelectronic Material GaSe. Materials Reports, 2022, 36(5): 20080191-10.
链接本文:  
http://www.mater-rep.com/CN/10.11896/cldb.20080191  或          http://www.mater-rep.com/CN/Y2022/V36/I5/20080191
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