Abstract: The c-axis epitaxial CuCr1-xMgxO2(x=0—0.08) thin films were grown on the 0—15° vicinal cut α-Al2O3(0001) substrate by pulsed laser deposition (PLD) technology. With the increase of Mg doping, the thin films are all single-phase delafossite structure. The thin films exhibit semiconductor behavior, which conforms to Arrhenius thermal activation mode. The room temperature resistivity decreased monotonically by 2—3 orders of magnitude, the thermal activation energy dropped from 0.22 eV to 0.025 eV. It was inferred that the solid solubility of Mg in the thin film was at least 0.08, which was significantly extended compared with polycrystalline (~0.03). The non-equilibrium and instantaneous explosion characteristics of PLD make Mg in the target second phase (MgCr2O4) transport to the substrate by plasma, and dissolve into the thin film lattice, resulting in an extension of the solid solubility. The transmittance of the thin films (x=0, 0.02) was 60%—80% in the visible light region of 380—780 nm. The direct optical bandgap Eg was 3.06 eV, 3.04 eV, respectively. The acceptor energy level is introduced and broadened above the valence band top while more Cr3+ replaced by Mg2+, making thermal activation energy decrease significantly, the more carriers can be gene-rated. The transmittance and optical band gap have a slight drop. When Mg is solid-dissolved into the crystal lattice, which promotes the growth of layered crystal grains of the thin films, the epitaxialitye are improved, and the resistivity is further reduced.
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2021, Vol. 35 
