1 School of Mechanics and Power Engineering of China Three Gorges University, Yichang 433000, China 2 National Key Laboratory for Remanufacturing, Army Academy of Armored Forces, Beijing 100072, China
Abstract: Ferroelectric thin films with the thickness of tens of nanometers to several microns have good piezoelectric, dielectric and pyroelectric properties, which have wide application prospects in the fields of microelectronics, photoelectronics and microelectromechanical systems. With the development of the preparation technology of ferroelectric thin films, the combination of modern microelectronic technology and various functions of ferroelectric thin films will develop many new functional devices and promote the development of emerging technologies. Therefore, the research on ferroelectric thin films has become a very active field in the research of new materials at home and abroad. Ferroelectric memory is particularly attractive in many applications of ferroelectric thin films. How to prepare the ferroelectric thin films with good properties and meet the requirements of integrated ferroelectric parts has become the key link restricting the application of ferroelectric thin films. The progress of thin film preparation technology can improve the quality of ferroelectric thin films. At present, people have been able to use various methods to prepare excellent ferroelectric thin films. In general, the preparation of ferroelectric thin films can be divided into chemical deposition and physical deposition according to their film-making mechanism. Micronanometer ferroelectric thin films are prepared by chemical deposition. The properties of ferroelectric thin films are improved by studying the composition, doping and orientation of thin films. Physical deposition is generally carried out under a high vacuum degree. By adopting different substrates and adjusting the temperature of substrates, films with different orientations, even epitaxial films, can be prepared. This method is particularly important for the preparation of films with high anisotropy of spontaneous polarization. The properties of ferroelectric coatings can be improved from the aspects of element doping, heat treatment and process parameter optimization. The progress of ferroelectric thin film preparation technology can improve the quality of thin film, and the improvement of film quality can promote the progress of functional device preparation technology and the improvement of performance, so that it is widely used. In this paper, the recent advances in the preparation and application of ferroelectric thin films are reviewed, and the physico-chemical mechanism, advantages and disadvantages and application of ferroelectric thin films are discussed in view of the technical difficulties in the preparation of ferroelectric thin films by chemical, physical and thermal spraying methods.
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