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《材料导报》期刊社  2017, Vol. 31 Issue (12): 21-25    https://doi.org/10.11896/j.issn.1005-023X.2017.012.005
  材料研究 |
SnO2掺杂对BMN陶瓷结构及介电性能的影响*
彭森1,2, 吴孟强2, 黄同成1, 许建明1, 周建华1, 罗高峰1, 余建坤1, 张树人2
1 邵阳学院信息工程系, 邵阳 422000;
2 电子科技大学能源科学与工程学院, 成都 611731
Effect of SnO2 Doping on the Structure and Dielectric Properties of BMN Ceramics
PENG Sen1,2, WU Mengqiang2, HUANG Tongcheng1, XU Jianming1, ZHOU Jianhua1, LUO Gaofeng1, YU Jiankun1, ZHANG Shuren2
1 Department of Information Engineering, Shaoyang University, Shaoyang 422000;
2 School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731
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摘要 采用固相烧结法制备Ba(Mg1/3Nb2/3)O3+x(x=0~8)% SnO2(BMSN,x为质量分数)微波介质陶瓷,并研究SnO2掺杂对Ba(Mg1/3Nb2/3)O3 (BMN)微波介质陶瓷结构及介电性能的影响。XRD分析表明,陶瓷体系中存在两种相,主晶相Ba(Mg1/3-Nb2/3)O3和附加相Ba5Nb4O15。随着x的增大,BMSN陶瓷体系的相结构逐渐由钙钛矿六方结构转变为立方结构,同时有序相逐渐由1∶2有序结构转变为1∶1有序结构。研究表明:添加适量的SnO2可以促进液相烧结,当SnO2掺杂质量分数为6%时,BMN陶瓷致密化烧结温度由纯相时的1 550 ℃以上降低至1 200 ℃,表观密度ρ = 6.39 g/cm3,相对理论密度为99.1%,此时BMSN陶瓷体系拥有优良的微波介电性能——高相对介电常数(εr=33.6),接近于零的谐振频率温度系数(τf=0.15×10-6℃-1),高品质因数与谐振频率的乘积(Q·f = 112 300 GHz (8 GHz))。
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彭森
吴孟强
黄同成
许建明
周建华
罗高峰
余建坤
张树人
关键词:  微波介质陶瓷  掺杂  晶体结构  介电性能    
Abstract: The structure and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 (BMN) ceramics doped with x(x=0-8)wt% SnO2 (BMSN) were investigated by the solid-state reaction technique. XRD analysis suggested there were two phases: main crystalline phase Ba(Mg1/3Nb2/3)O3 and secondary phase Ba5Nb4O15. As x value increased, the crystal structure changed from pe-rovskite hexagonal structure to cubic structure and the ordered phase changed from 1∶2 ordered structure to 1∶1 ordered structure. It was found that the liquid phase sintering can be promoted greatly by adding an appropriate amount of SnO2. When 6wt% SnO2 was added, the BMN ceramic showed a lower sintering temperature (1 550 ℃) compared to pure BMN (1 200 ℃), an apparent density ρ of 6.39 g/cm3, a relative theoretical density of 99.1%, also excellent microwave dielectric properties: high relative dielectric constant(εr= 33.6), near-zero temperature coefficient of resonant frequency value τf=0.15×10-6℃-1, high quality factor plus resonant frequency (Q·f=112 300 GHz (8 GHz)).
Key words:  microwave dielectric ceramic    doping    crystal structure    dielectric property
               出版日期:  2017-06-25      发布日期:  2018-05-08
ZTFLH:  TM277  
基金资助: *国家自然科学基金 (61135004);湖南省自然科学基金 (14JJ7075;15JJ2130);湖南省教育厅基金 (13A091;14A129;07C681);邵阳学院资助项目(2016JG43)
通讯作者:  吴孟强:通讯作者,男,1970年生,博士,教授,主要从事微波介质材料与器件、新能源材料与器件的研究开发 E-mail:mwu@uestc.edu.cn   
作者简介:  彭森:男,1983年生,硕士,讲师,主要从事微波介质材料与器件的研究
引用本文:    
彭森, 吴孟强, 黄同成, 许建明, 周建华, 罗高峰, 余建坤, 张树人. SnO2掺杂对BMN陶瓷结构及介电性能的影响*[J]. 《材料导报》期刊社, 2017, 31(12): 21-25.
PENG Sen, WU Mengqiang, HUANG Tongcheng, XU Jianming, ZHOU Jianhua, LUO Gaofeng, YU Jiankun, ZHANG Shuren. Effect of SnO2 Doping on the Structure and Dielectric Properties of BMN Ceramics. Materials Reports, 2017, 31(12): 21-25.
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http://www.mater-rep.com/CN/10.11896/j.issn.1005-023X.2017.012.005  或          http://www.mater-rep.com/CN/Y2017/V31/I12/21
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