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材料导报  2024, Vol. 38 Issue (22): 23100129-7    https://doi.org/10.11896/cldb.23100129
  无机非金属及其复合材料 |
含孤立四面体基元的AMO4型质子导体的研究进展
耿鑫悦, 杭高庆, 欧长良, 杨小燕*
桂林理工大学材料科学与工程学院,广西光电材料与器件重点实验室,广西 桂林 541004
Research Progress of AMO4 Based Proton Conductors Containing Isolated Tetrahedral Moieties
GENG Xinyue, HANG Gaoqing, OU Changliang, YANG Xiaoyan*
Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, Guangxi, China
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摘要 AMO4(A=稀土元素,M=Nb,P,As,V…)氧化物因结构中含有灵活旋转和易变形的孤立MO4四面体结构基元,有利于氧和质子的稳定和离子的长程迁移,是良好的无机固态离子导体候选体系。根据载流子种类可将无机固态离子导体主要分为氧离子导体和质子导体,与氧离子导体相比,质子导体具有较低的迁移能垒。本文首先概述了AMO4型质子导体的晶体结构、导电性与受体掺杂剂对质子导电性的影响,以及部分结构中质子缺陷的稳定形式与离子迁移机制;然后总结了影响AMO4型质子导体导电性、质子稳定及迁移的关键因素,包括A位和M位阳离子尺寸、MO4四面体的畸变程度和相邻MO4四面体氧离子之间的距离等;最后展望了AMO4型质子导体未来的发展方向。
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耿鑫悦
杭高庆
欧长良
杨小燕
关键词:  AMO4型质子导体  孤立四面体  缺陷稳定  离子迁移机制  构效关系    
Abstract: AMO4(A=rare earth element, M=Nb, P, As, V, etc.) based oxides are good candidates for inorganic solid-state ion conductors due to their structures features with isolated MO4 tetrahedral moieties with rotation flexibility and great deformation, which facilitate oxygen and proton defects stabilization and ionic long-range migration. The inorganic solid-state ion conductors can be divided into oxygen ion conductors and proton conductors according to the charge carrier type. Compared with oxide ion conductors, proton conductors exhibit lower migration energy barrier. This paper firstly outlines the crystal structure, conductivity, and the effect of acceptor dopants on proton conductivity in AMO4-based compositions. As well as the proton defects stabilization and migration mechanism in part of AMO4structures. Then it summarizes the key factors affecting the conductivity, proton stabilization and migration in AMO4 based proton conductors, including cation size of A and M sites, distortion level of MO4 tetrahedron and cationic distance between adjacent MO4 tetrahedron. Finally, here prospects the future development direction of AMO4 based proton conductors.
Key words:  AMO4-type proton conductors    isolated tetrahedron    defect stabilization    ion migration mechanism    structure-activity relationship
出版日期:  2024-11-25      发布日期:  2024-11-22
ZTFLH:  TQ152  
基金资助: 广西自然科学基金(2020GXNSFAA297050);国家自然科学基金(22005073;22365011);广西光电材料与器件重点实验室开放基金(20AA-1);桂林理工大学科研启动金(2017011)
通讯作者:  *杨小燕,桂林理工大学材料科学与工程学院副研究员、硕士研究生导师。2013年重庆文理学院化学专业本科毕业,2016年桂林理工大学材料科学与工程学院材料科学与工程专业硕士毕业,2021年桂林理工大学材料科学与工程专业博士毕业,2022—2023年在北京大学化学与分子工程学院作访问学者。研究方向为无机材料与固体化学,从事固态氧化物燃料电池关键材料、微波介质陶瓷和锂/钠阳离子导体等无机功能材料的构效关系研究。发表高水平SCI学术论文21篇,包括Chemical Reviews、Nature Communications、Chemistry of Materials、Inorganic Chemistry Frontiers等。yangxy@glut.edu.cn   
作者简介:  耿鑫悦,2021年6月于德州学院获得工学学士学位。现为桂林理工大学材料科学与工程学院硕士研究生,在杨小燕副研究员的指导下进行研究。目前主要研究领域为无机功能材料。
引用本文:    
耿鑫悦, 杭高庆, 欧长良, 杨小燕. 含孤立四面体基元的AMO4型质子导体的研究进展[J]. 材料导报, 2024, 38(22): 23100129-7.
GENG Xinyue, HANG Gaoqing, OU Changliang, YANG Xiaoyan. Research Progress of AMO4 Based Proton Conductors Containing Isolated Tetrahedral Moieties. Materials Reports, 2024, 38(22): 23100129-7.
链接本文:  
http://www.mater-rep.com/CN/10.11896/cldb.23100129  或          http://www.mater-rep.com/CN/Y2024/V38/I22/23100129
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