氧化镍空穴材料在Ⅱ-Ⅵ族量子点电致发光器件中的应用进展

doi:10.11896/cldb.22100205

材料导报

2024, Vol. 38

Issue (14): 22100205-8 https://doi.org/10.11896/cldb.22100205

无机非金属及其复合材料

氧化镍空穴材料在Ⅱ-Ⅵ族量子点电致发光器件中的应用进展

林坚^1,*, 张松林¹, 王悦安¹, 孙浩¹, 聂钰昌¹, 陈德睢^2,*

1 苏州科技大学材料科学与工程学院,江苏苏州 215009
2 浙江大学化学系,浙江省激发态材料合成与应用重点实验室,杭州 310027

Development of Nickel Oxide Hole Materials in Ⅱ-Ⅵ Quantum Dot Electroluminescent Devices

LIN Jian^1,*, ZHANG Songlin¹, WANG Yuean¹, SUN Hao¹, NIE Yuchang¹, CHEN Desui^2,*

1 School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu, China
2 Zhejiang Key Laboratory of Excited-State Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China

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摘要鉴于高效发光的Ⅱ-Ⅵ族量子点(Ⅱ-Ⅵ QD)电致发光(EL)器件已达到基本的商用需求,器件长期性能(寿命)受到了更多的重视。Ⅱ-Ⅵ QD EL器件中PEDOT:PSS材料易吸湿、易腐蚀ITO电极,这对器件寿命及商业应用潜力存在负面影响。采用高稳定性的NiO代替PEDOT:PSS可避免材料对器件稳定性产生影响。本文系统综述了NiO空穴材料在Ⅱ-Ⅵ QD EL器件中的研究进展,重点归纳了NiO薄膜的不同制备方法、掺杂和界面特性对器件性能的影响,最后对基于金属氧化物空穴功能层的Ⅱ-Ⅵ QD EL器件的研究趋势进行了展望,以期为制备在材料与器件层面稳定、高效的电致发光器件提供借鉴。

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	林坚
	张松林
	王悦安
	孙浩
	聂钰昌
	陈德睢

关键词: 氧化镍 p型半导体量子点电致发光掺杂表面修饰

Abstract: Highly efficient group Ⅱ-Ⅵ quantum dot(Ⅱ-Ⅵ QD)electroluminescence(EL)devices have been able to meet the basic commercial requirements, more attention has been paid to the long-term performance (lifetime) of the device. In the Ⅱ-Ⅵ QD EL devices, PEDOT:PSS is easy to absorb moisture and corrode ITO electrodes, which has a negative impact on device lifetime and commercial application potential. Replacing organic PEDOT:PSS with highly stable NiO could avoid the influence of materials on the stability of devices. This manuscript systematically reviews the research progress of NiO hole functional material in Ⅱ-Ⅵ QD EL devices, and focuses on the effects of different preparation methods, doping and interface characteristics of NiO films on the performance of devices. Finally, we made a prospect on the research trend of Ⅱ-Ⅵ QD EL devices based on the metal oxide hole functional layer, which may provide views for the preparation of stable and efficient EL devices at the material and device levels.

Key words: nickel oxide p-type semiconductor quantum dots electroluminescence doping surface modification

出版日期: 2024-07-25 发布日期: 2024-08-12

ZTFLH:

O649.2

基金资助: 国家自然科学基金(22001187);中国博士后基金(2018M640548);江苏省高等学校自然科学研究项目(20KJB150032)

通讯作者: * 林坚,苏州科技大学材料科学与工程学院副教授、硕士研究生导师。2008年中国计量大学应用物理专业本科毕业,2011年中国计量大学材料物理与化学专业硕士毕业并于光伏企业从事晶硅光伏技术研发,2012年于苏州大学吴涛教授课题组从事科研助理工作并读博,于2017年获得苏州大学无机化学博士学位。2019年浙江大学化学系金一政研究员课题组博士后出站并于苏州科技大学工作至今。目前主要从事晶态光电功能材料的合成及器件化研究。发表论文20余篇,包括J. Am. Chem. Soc.、Angew. Chem. Int. Ed.、Adv. Funct. Mater.、Nano Research、ACS Appl. Mater. Interfaces等。linjian@mail.usts.edu.cn
陈德睢,博士,助理研究员,2020年于浙江大学获得博士学位,主要从事氧化物半导体纳米晶的合成与溶液工艺光电器件研究。发表论文5篇,包括Adv. Mater.、Nano Lett.、Nano Research、 Chem. Eur. J.、J. Phys. Chem. C等。chendesui123@126.com

引用本文:

林坚, 张松林, 王悦安, 孙浩, 聂钰昌, 陈德睢. 氧化镍空穴材料在Ⅱ-Ⅵ族量子点电致发光器件中的应用进展[J]. 材料导报, 2024, 38(14): 22100205-8.
LIN Jian, ZHANG Songlin, WANG Yuean, SUN Hao, NIE Yuchang, CHEN Desui. Development of Nickel Oxide Hole Materials in Ⅱ-Ⅵ Quantum Dot Electroluminescent Devices. Materials Reports, 2024, 38(14): 22100205-8.

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http://www.mater-rep.com/CN/10.11896/cldb.22100205 或 http://www.mater-rep.com/CN/Y2024/V38/I14/22100205

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