Abstract: GaN-based light-emitting diodes (LEDs) thin films were successfully transferred from the original c-sapphire substrate to metal substrate via electroplate and laser lift-off and then the vertical structure LEDs were fabricated. Temperature and current dependence of characteristics in these LEDs were tested. The result indicated that the samples had excellent characteristics depended on temperature and current. These excellent characteristics mostly possibly attributed to the high quality crystal, excellent heat conductivity of the mental substrate and the reasonable structure of epitaxy.
汪延明, 周智斌, 廖富达, 何鹏, 周波, 苗振林, 季辉. 氮化镓基金属基板蓝光LED变温变电流性能[J]. 材料导报, 2020, 34(Z2): 48-51.
WANG Yanming, ZHOU Zhibin, LIAO Fuda, HE Peng, ZHOU Bo, MIAO Zhenlin, JI Hui. Temperature and Current Dependence of Characteristics in GaN-based Blue LED on Metal Substrate. Materials Reports, 2020, 34(Z2): 48-51.
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