新型二维半导体材料砷烯的研究进展

材料导报

2019, Vol. 33

Issue (z1): 22-27

无机非金属及其复合材料

新型二维半导体材料砷烯的研究进展

潘留仙¹, 夏庆林²

1 湖南外国语职业学院信息科学与工程系,长沙 410000
2 中南大学物理与电子学院,长沙 410083

Research Progress of Novel 2D Semiconductor Material Arsenene

PAN Liuxian¹, XIA Qinglin²

1 Department of Information Science and Engineering, Hunan Foreign Studies Vocational College, Changsha 410000
2 School of Physics and Electronics, Central South University, Changsha 410083

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摘要新型二维半导体材料黑磷(磷烯)因具有优异的光电和输运特性而受到广泛关注,并激发了学者们对VA族类似材料,如砷烯(α-砷烯和β-砷烯)、锑烯和铋烯的研究兴趣。作为重要的半导体材料,高纯砷一直备受关注。近几年来, 关于砷烯理论研究的报道越来越多, 实验研究也取得了一定进展。本文着重从应变、电场、元素掺杂、取代、官能团化、纳米带裁剪、异质结、器件模拟等方面介绍了与砷烯相关的理论研究工作最新进展,总结了对应情况下砷烯能带结构、光学性质、磁性、拓扑绝缘态、光催化、输运性质和器件性能等特点。介绍了当前几个研究小组对灰砷(β-砷烯)和本课题组对黑砷(α-砷烯)的相关实验研究情况。最后对该材料体系的发展趋势进行了展望。

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	潘留仙
	夏庆林

关键词: 砷烯新型二维半导体材料元素掺杂异质结

Abstract: Due to its excellent photoelectric and transport properties, a new two-dimensional semiconductor material, black phosphorus (phosphene), has been widely concerned, and it has also stimulated research interesting in similar materials such as arsenene (α-arsenene and β-arsenene), antimonene, bismuthene, and so on. As an important semiconductor material, high purity arsenic has been paid more and more attention. In recent years, more and more reports have been reported on the theoretical study of arsenene, and some progress has been made in experimental research. In this paper, the latest research progress related to arsenene in strain, electric field, element doping, substitution, functionalization, nanoribbons clipping, heterojunction, device simulation and so on is introduced, and the energy band structure, optical properties, magnetic properties, topological insulators, photocatalysis, transport properties and device properties of arsenene in corresponding cases are summarized. In the same time, some experimental studies on grey arsenic (β-arsenene) in several research groups and black arsenic (α-arsenene) in our group are introduced. Finally, the development trend of the material is prospected.

Key words: arsenene novel two-dimensional semiconductor material element doping heterojunction

出版日期: 2019-05-25 发布日期: 2019-07-05

ZTFLH:

O472

基金资助: 国家自然科学基金(11674400);湖南省自然科学基金( 2018JJ2511)

作者简介: 潘留仙,教授,主要从事光电和量子信息研究。夏庆林,副教授,主要从事新型二维材料制备及物性、磁学和磁性材料、第一性原理计算研究。qlxia@csu.edu.cn

引用本文:

潘留仙, 夏庆林. 新型二维半导体材料砷烯的研究进展[J]. 材料导报, 2019, 33(z1): 22-27.
PAN Liuxian, XIA Qinglin. Research Progress of Novel 2D Semiconductor Material Arsenene. Materials Reports, 2019, 33(z1): 22-27.

链接本文:

http://www.mater-rep.com/CN/ 或 http://www.mater-rep.com/CN/Y2019/V33/Iz1/22

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