ZnS溅射功率对Cu2ZnSnS4薄膜附着性及太阳电池性能的影响

材料导报

2019, Vol. 33

Issue (Z2): 24-27

无机非金属及其复合材料

ZnS溅射功率对Cu₂ZnSnS₄薄膜附着性及太阳电池性能的影响

王璐¹, 郭杰¹, 郝瑞亭², 顾康², 刘斌¹, 王远方舟¹, 孙帅辉¹

1 云南师范大学,云南省光电信息技术重点实验室,昆明 650500;
2 云南师范大学能源与环境科学学院,可再生能源材料先进技术与制备教育部重点实验室,昆明 650500

Influence of ZnS Sputtering Power on Cu₂ZnSnS₄ Thin Film Adhesion andPerformance of Solar Cells

WANG Lu¹, GUO Jie¹, HAO Ruiting², Gu Kang², LIU Bin¹, WANG Yuanfangzhou¹, SUN Shuaihui¹

1 Yunnan Key Laboratory of Optoelectronic Information Technology, Yunnan Normal University, Kunming 650500;
2 Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology Ministry of Education, School of Energy and Environment Sciences, Yunnan Normal University, Kunming 650500

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摘要采用不同ZnS溅射功率,在钠钙玻璃(SLG)衬底上依次溅射Mo、ZnS、SnS及Cu,退火后制备出Cu₂ZnSnS₄(CZTS)薄膜。研究了溅射功率(50~140W)对ZnS薄膜和CZTS薄膜的微观形貌、微结构以及附着性的影响。结果表明,不同功率溅射的ZnS薄膜为(008)择优取向的纤锌矿六方晶系结构;功率较低时,ZnS薄膜结晶质量较差;随着功率从50 W增加到140 W,ZnS薄膜内的压应力增加了一个数量级;ZnS溅射功率低于80 W或高于110 W时,退火后的CZTS薄膜发生龟裂甚至脱落;ZnS溅射功率在80~110 W时,退火后CZTS薄膜表面均匀平整;110 W溅射后的CZTS薄膜出现较多的孔洞和二次相。采用80 W功率溅射ZnS薄膜制备的CZTS/CdS太阳电池,开路电压达到572 mV,短路电流密度为14.23 mA/cm²,光电转换效率为3.34%。

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	王璐
	郭杰
	郝瑞亭
	顾康
	刘斌
	王远方舟
	孙帅辉

关键词: 铜锌锡硫硫化锌应力附着性

Abstract: The stacking precursors SLG/Mo/ZnS/SnS/Cu were sputtered ZnS, SnS and Cu target in sequence on soda-lime glass (SLG) substrates in which the sputtering power of ZnS changed from 50 W to 140 W. Then Cu₂ZnSnS₄ (CZTS) thin films were obtained by annealing. The effects of ZnS sputtering powers on the morphology, microstructure and adhesion in ZnS thin films and followed CZTS thin films were investigated. The results showed that the ZnS thin films with different power sputtering were hexagonal wurtzite with (008) preferred orientation. The poor crystallization in ZnS thin film was found at low sputtering power. The compressive stress in ZnS thin film increased by an order of magnitude with sputtering power from 50 W to 140 W. When sputtering power of ZnS was lower than 80 W or higher than 110 W, the crack and even falling off phenomenon were observed in the annealed CZTS thin films. From 80 W to 110 W, the surface of CZTS thin film was even but more holes and se-condary phases appeared at higher power of 110 W. The CZTS solar cell was prepared with ZnS thin films sputtered at 80 W, which showed open circuit voltage of 572 mV, short circuit current density of 14.23 mA/cm² and photoelectric conversion efficiency of 3.34%.

Key words: Cu₂ZnSnS₄ ZnS stress adhesive property

出版日期: 2019-11-25 发布日期: 2019-11-25

ZTFLH:

TM914.4

基金资助: 国家自然科学基金(61774130;11474248;61176127;61006085);云南省应用基础研究计划(2017FD069)

通讯作者: jieggg1020@sina.com; ruitinghao@semi.ac.cn

作者简介: 王璐,云南师范大学,硕士研究生,主要从事铜锌锡硫薄膜太阳电池的研究。
郭杰,云南师范大学,副教授,博士毕业于西北工业大学,主要从事红外探测技术的研究。
郝瑞亭,云南师范大学,教授,博士毕业于中科院半导体研究所,主要从事红外探测技术的研究。

引用本文:

王璐, 郭杰, 郝瑞亭, 顾康, 刘斌, 王远方舟, 孙帅辉. ZnS溅射功率对Cu₂ZnSnS₄薄膜附着性及太阳电池性能的影响[J]. 材料导报, 2019, 33(Z2): 24-27.
WANG Lu, GUO Jie, HAO Ruiting, Gu Kang, LIU Bin, WANG Yuanfangzhou, SUN Shuaihui. Influence of ZnS Sputtering Power on Cu₂ZnSnS₄ Thin Film Adhesion andPerformance of Solar Cells. Materials Reports, 2019, 33(Z2): 24-27.

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http://www.mater-rep.com/CN/ 或 http://www.mater-rep.com/CN/Y2019/V33/IZ2/24

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