基于WS2-Q2DEG异质结的可充电式光电探测器

doi:10.11896/cldb.25070039

材料导报

2026, Vol. 40

Issue (3): 25070039-6 https://doi.org/10.11896/cldb.25070039

无机非金属及其复合材料

基于WS₂-Q2DEG异质结的可充电式光电探测器

王韵^1,†, 李帆^1,†, 戴称民^1,2, 李慧姝³, 赵润^1,2,*, 姜昱丞^1,2

1 苏州科技大学物理科学与技术学院,江苏省高校智能光电子器件与芯片重点实验室,江苏苏州 215009
2 苏州科技大学物理科学与技术学院,太湖光子中心先进技术研究所,江苏苏州 215009
3 苏州经贸职业技术学院信息技术学院,江苏苏州 215009

Rechargeable Photodetector Based on WS₂-Q2DEG Heterojunction

WANG Yun^1,†, LI Fan^1,†, DAI Chengmin^1,2, LI Huishu³, ZHAO Run^1,2,*, JIANG Yucheng^1,2

1 Key Laboratory of Intelligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu, China
2 Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu, China
3 School of Information Technology, Suzhou Institute of Trade & Commerce, Suzhou 215009, Jiangsu, China

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摘要本研究报道了一种基于WS₂/准二维电子气(Q2DEG)范德华异质结的可充电式光电探测器。通过氩离子束轰击辅助(AIBA)工艺在SrTiO₃(STO)衬底上构建横向异质结,实现了光生载流子的高效存储与可控释放。单次光照后器件可存储载流子长达5天,暗态下施加偏压可释放高达0.1 mA的强光电流,完全充电前后的电流比达10⁵,显著优于持续光照模式。同时,该器件表现出高性能可充电光电导(CPC)效应,这得益于空间电荷区(SCR)中非自发复合载流子的长寿命特性。其载流子存储临界温度提升至100 K(较已知体系提高约20 K);宽谱响应覆盖405～1 064 nm,突破传统WS₂基器件的波长限制,其中405 nm激光激发下电荷存储密度最高。进一步研究揭示了磁场对存储电荷量的增强效应(-7～7 T范围内电荷量随磁场强度增加),且异质结界面准一维化效应提升了器件的电学性能。该器件融合了光电转换与能量存储功能,为下一代存储型光电器件和量子信息技术提供了新思路。

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关键词: 可充电光电探测器横向范德华异质结宽谱光电响应离子束辅助轰击

Abstract: This study presents a rechargeable photodetector based on a WS₂/quasi-two-dimensional electron gas (Q2DEG) van der Waals heterostructure. The device is fabricated on a SrTiO₃ (STO) substrate using an argon ion beam bombardment assisted (AIBA) process to form a lateral heterojunction, which facilitates efficient storage and released photogenerated carriers. Following a single illumination, the device demonstrates a photocurrent as high as 0.1 mA and can retain carriers for up to 5 days under dark conditions with applied bias. The current ratio achieves 10⁵ before and after full charging, significantly superior to the continuous illumination modes. The device exhibits remarkable rechargeable photoconductivity (CPC) effects, with the critical temperature for carrier storage increasing to 100 K approximately 20 K higher than in existing systems. This enhancement is attributed to the long carrier lifetime within the space-charge region (SCR), which effectively prevents spontaneous recombination. Furthermore, the broad spectral response ranges from 405 nm to 1 064 nm, breaking the wavelength limitations typically seen in WS₂based devices. And the highest charge storage density can be observed under 405 nm laser excitation. Additional investigation reveals the charge sto-rage capacity improves with increasing magnetic field (from -7 T to 7 T), while quasi-one-dimensional effect at the heterojunction interface enhances the electrical performance of the device. By integrating photonic conversion and energy storage functionalities, this innovative device offers promising prospects for next-generation photodetectors and quantum information technologies.

Key words: rechargeable photoelectric detector transverse van der Waals (vdW) heterojunction wide-spectrum photoelectric response ion beam bombardment assisted (AIBA)

发布日期: 2026-02-13

ZTFLH:

O469

基金资助: 国家自然科学基金(12204339;12374090;12404093;22202143;51802210);江苏省科委优秀青年基金(BK20220118)

通讯作者: ^*赵润,博士,苏州科技大学物理科学与技术学院副教授、硕士研究生导师。主要从事功能薄膜和光电器件方面的研究。

作者简介: 王韵,苏州科技大学物理科学与技术学院硕士研究生。目前主要研究领域为光电器件。
李帆,苏州科技大学物理科学与技术学院硕士研究生。目前主要研究领域为自旋逻辑器件。
^†共同第一作者

引用本文:

王韵, 李帆, 戴称民, 李慧姝, 赵润, 姜昱丞. 基于WS₂-Q2DEG异质结的可充电式光电探测器[J]. 材料导报, 2026, 40(3): 25070039-6.
WANG Yun, LI Fan, DAI Chengmin, LI Huishu, ZHAO Run, JIANG Yucheng. Rechargeable Photodetector Based on WS₂-Q2DEG Heterojunction. Materials Reports, 2026, 40(3): 25070039-6.

链接本文:

https://www.mater-rep.com/CN/10.11896/cldb.25070039 或 https://www.mater-rep.com/CN/Y2026/V40/I3/25070039

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