| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Research Progress on Preparation Methods and Defect Control of Silicon Carbide Single Crystal |
| YANG Hao1,2, LI Tai1,2, ZHANG Guangxin1,2, LYU Guoqiang1,2,*, CHEN Xiuhua3
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1 School of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
2 Yunnan Silicon Industry Engineering Research Center, Kunming 650093, China
3 School of Materials and Energy, Yunnan University, Kunming 650091, China |
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Abstract As the third generation semiconductor, silicon carbide (SiC) has excellent characteristics such as wide band gap, high carrier mobility, high thermal conductivity and good stability. It has great potential in the field of power electronic devices, especially in high temperature, high frequency, high power and other application scenarios. The primary techniques currently used for SiC crystal growth include physical vapor transport (PVT), high-temperature chemical vapor deposition (HTCVD), and top-seed solution growth (TSSG). During the growth and epitaxy of SiC single crystals, various types of defects inevitably arise, which can significantly affect the performance of semiconductor devices. This is manifested in reduced breakdown voltage, increased leakage current, and changes in on-resistance. Such performance variations not only diminish the efficiency and reliability of the devices but may also lead to complete device failure. Therefore, in order to improve the yield and performance of SiC semiconductor devices, it is very important to reduce and control various defects generated during the growth of SiC crystals before device fabrication. In this paper, the current preparation methods of SiC single crystal, the defects produced in the growth process of SiC crystal and their detection technology are summarized. The transformation and influencing factors between the defects produced in the growth process of SiC crystal are analyzed and studied, and the methods to reduce the defect density of SiC single crystal are discussed. Finally, the development direction of defect control technology in the growth process of SiC single crystal is prospected.
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Published: 25 January 2026
Online: 2026-01-27
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