Abstract: Apulsed laser deposition (PLD) method was used to prepare thin-film capacitors of MIM structure with TiN/Al-doped Hf0.5Zr0.5O2/TiN on Pt/Ti/SiO2/Si substrates. The microstructure and electrical properties of Al∶Hf0.5Zr0.5O2 film with Al doping concentration of 0% to 4% (mol fraction) were studied. On this basis, the effect of annealing temperature on the Al∶Hf0.5Zr0.5O2 film was also studied. The test results show that, as the Al doping concentration increases and the annealing temperature decreases, the tetragonal phase becomes more stable, the hysteresis loop becomes narrower, and the residual polarization decreases. When the annealing temperature is 500 ℃, the Al∶Hf0.5Zr0.5O2 film with doping concentration of 1.03% will induce a double-hysteresis loop characteristic similar to antiferroelectricity, and the energy storage density is higher. The analysis results show that these changes are due to the field-induced reversible phase transition between the tetragonal phase and the orthogonal phase and the redistribution of oxygen vacancies in the Al∶Hf0.5Zr0.5O2 film.
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2021, Vol. 35 
