Preparation and Thermoelectric Properties of Yb Doped Type-Ⅷ YbxBa8-xGa16Sn30 Clathrate
SHEN Lanxian1, CHEN Jiali1, LI Decong2, LIU Wenting1, GE Wen1, DENG Shukang1
1 Solar Energy Research Institution, Yunnan Provincial Renewable Energy Engineering Key Lab, Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500, China; 2 College of Optoelectronic Engineering, Yunnan Open University, Kunming 650500, China
Abstract: In this work, a successful effort was made in growing Yb-doped type-Ⅷ YbxBa8-xGa16Sn30 clathrate thermoelectric materials via a Sn-flux method.The electrical conductivity, Seebeck coefficient, and Hall coefficient of these samples were measured to analyze their electrical pro-perties,and ZT values were estimated. The results showed that the lattice constant of the material decreased with the increase of Yb content.The conductivity of the sample with x=1.5 was higher than that of other samples in the whole test temperature range, and the conductivity was improved by about 60% compared with that of the sample with x=0, which was due to higher carrier concentration when carrier mobility was comparable.In addition, the conductivity of the samples from 300 K to 583 K decreased with the increase of temperature, showing the characteristics of degenerate semiconductor. After 583 K, the conductivity increased with the increase of temperature, showing the characteristics of semiconductor. Within the test temperature range (300—600 K), the absolute value of Seebeck coefficient for all samples initially increased to a maximum value and subsequently decreased with the increase of temperature. The sample with x=1.5 obtained a large power factor with the maximum va-lue of 2.43×10-3 W/(m·K2) (at 489 K)due to its high conductivity, and the estimated ZT obtained a maximum value of 1.35 at 489 K.
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