Influence of Directional Solidification Induced by Electron Beam on Segregation of Fe in Silicon
JIANG Jianbo1,2, HUANG Yiping3, LI Shaolin3, LIU Hailang3, PENG Zhiguo3, TAN Yi4
1 State Key Laboratory of Metal Materials for Marine Equipment and Applications, Anshan 114000, China 2 Ansteel Beijing Research Institute, Beijing 102209, China 3 Institute of Electrical and Mechanical Engineering, Guilin University of Electronic Technology, Guilin 541004, China 4 School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Abstract: Directional solidification is a main technology to remove metal impurities in silicon. These impurities can be enriched to the final solidification region by segregation effect. The effect of segregation depends on the driving force of impurities transport at the front of solid-liquid interface. However, during traditional directional solidification technology, the driving force provided by thermal gradient is limited, so that the deep removal of impurities can only be achieved by reducing the solidification rate or increasing the solidification times. In this study, the directional solidification of silicon is achieved by the induction of electron beam, the purification effect of Fe and its influence mechanism are investigated. The results show that Fe content is reduced to less than 0.2×10-6 by the induction of electron beam. The diffusion layer thickness of Fe is 4.13×10-4 m, which is one order of magnitude smaller than that during traditional directional solidification. The large temperature gradient formed by electron beam enhances the convection of melt, and the directional migration of electrons interacts with impurity elements, which increase the driving force of impurity transport at the front of solid-liquid interface.
蒋健博, 黄以平, 李少林, 刘海浪, 彭治国, 谭毅. 电子束诱导定向凝固对硅中Fe杂质分凝的影响[J]. 材料导报, 2020, 34(Z2): 173-176.
JIANG Jianbo, HUANG Yiping, LI Shaolin, LIU Hailang, PENG Zhiguo, TAN Yi. Influence of Directional Solidification Induced by Electron Beam on Segregation of Fe in Silicon. Materials Reports, 2020, 34(Z2): 173-176.
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2020, Vol. 34 
