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材料导报  2019, Vol. 33 Issue (Z2): 428-430    
  金属与金属基复合材料 |
化学腐蚀工艺对锗单晶片机械强度的影响
吕菲, 田原, 宋晶, 杨春颖, 刘雪松
中国电子科技集团公司第四十六研究所,天津 300220
Effect of Chemical Etching on Mechanical Strength of Germanium Wafers
LYU Fei, TIAN Yuan, SONG Jing, YANG Chunying, LIU Xuesong
The 46th Research Institute, CETC, Tianjin 300220
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摘要 锗单晶的机械强度受单晶生长方式和加工工艺等多因素的影响。在衬底片的加工过程中,晶片的强度随加工工艺变化。切割和磨削后的锗单晶片强度都很低,经过化学腐蚀后强度大幅提高,因此化学腐蚀成为影响锗单晶片机械强度的关键工艺。本工作研究了化学腐蚀液的组分、温度、腐蚀方式等对锗抛光片机械强度的影响,有效提高了锗抛光片的机械强度。
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吕菲
田原
宋晶
杨春颖
刘雪松
关键词:  锗单晶片  化学腐蚀  机械强度  粗糙度    
Abstract: The mechanical strength of germanium wafers are affected by many factors, such as single crystal growth method and process. In the process of wafers manufacture, the strength of wafer varies with the processing method. The strength of germanium wafers after cutting and grinding is very low, but the strength increases greatly after chemical etching. Therefore, chemical etching becomes the key process affecting the mecha-nical strength of germanium wafers. In this paper, the mechanical strength of the germanium wafers was improved by studying the influence factors such as the composition, temperature and corrosion mode of the chemical etching liquid.
Key words:  germanium wafer    chemical etching    mechanical strength    roughness
               出版日期:  2019-11-25      发布日期:  2019-11-25
ZTFLH:  TN304  
通讯作者:  tianyuanmse@qq.com   
作者简介:  吕菲,女,1967年生,高级工程师,主要研究方向为半导体材料加工。
田原,男,1989年生,工程师,主要研究方向为半导体材料加工。
引用本文:    
吕菲, 田原, 宋晶, 杨春颖, 刘雪松. 化学腐蚀工艺对锗单晶片机械强度的影响[J]. 材料导报, 2019, 33(Z2): 428-430.
LYU Fei, TIAN Yuan, SONG Jing, YANG Chunying, LIU Xuesong. Effect of Chemical Etching on Mechanical Strength of Germanium Wafers. Materials Reports, 2019, 33(Z2): 428-430.
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http://www.mater-rep.com/CN/  或          http://www.mater-rep.com/CN/Y2019/V33/IZ2/428
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