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材料导报  2024, Vol. 38 Issue (20): 23030081-12    https://doi.org/10.11896/cldb.23030081
  无机非金属及其复合材料 |
原子层/分子层沉积技术及其在半导体先进工艺中的应用
赵波*, 柳俊
湖北九峰山实验室,武汉 430206
Atomic/Molecular Layer Deposition Technology and Its Application in Advanced Process of Semiconductor
ZHAO Bo*, LIU Jun
Hubei Jiufengshan Laboratory, Wuhan 430206, China
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摘要 原子层沉积是一种气相沉积薄膜的技术,基于表面化学饱和吸附的连续自限反应的机理,薄膜沉积过程可以在各式各样的基底上实现原子级的保形性生长。凭借这一优势,原子层沉积成为半导体先进工艺制程中的重要技术,为实现原子级尺寸和精度的器件工艺提供了重要技术支撑。与传统的化学气相沉积和物理气相沉积不同,原子层沉积在低生长温度下制备的薄膜具有良好的台阶覆盖率、原子尺度上厚度的精准可控性和成分均匀性。分子层沉积是一种类似于原子层沉积的气相沉积技术,它可以精确控制所制备聚合物薄膜的厚度和组成,且同样具有优异的保形性,是一种制备聚合物薄膜的新兴技术。本文首先介绍了原子层沉积的技术原理和特征,然后结合原子层沉积的特征优势列举了原子层沉积在半导体先进工艺制程中应用的例子,包括用于制备高k介质层材料、籽晶层材料、扩散阻挡层材料、间隔层材料、水汽阻隔层材料。后续介绍了分子层沉积技术原理和原子层/分子层沉积组合技术制备的无机-有机杂化薄膜在介电材料和水汽阻隔材料中的应用,最后进行了总结并指出原子层沉积和分子层沉积技术将在芯片器件高端工艺中扮演越来越重要的角色。
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赵波
柳俊
关键词:  原子层沉积  分子层沉积  半导体  先进工艺  薄膜    
Abstract: Atomic layer deposition (ALD) is a technology of vapor-phase deposition of thin films. Based on the mechanism of continuous self-limiting reaction of surface chemical saturation adsorption, atomic level conformal growth can be achieved on a variety of substrates during ALD process. Relying on this unique advantage, ALD has become an important technology in the advanced process of semiconductor, providing an important technical support for the device process to achieve atomic size and accuracy. Different from the traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), ALD growths thin film at lower temperature with excellent step coverage, precise controllability of thickness and composition at atomic scale. Molecular layer deposition (MLD) is a kind of vapor-phase deposition method similar to ALD, which can accurately control the thickness and composition of the prepared polymer films, and with excellent conformality as well. This review introduces the technical principle and characteristics of ALD firstly, and then summaries the application examples of ALD in advanced semiconductor process, including high-k dielectric materials, seed layer materials, diffusion barrier materials, spacer materials, and water vapor barrier mate-rials. Subsequently, the MLD technology and the application of inorganic-organic hybrid films deposited by ALD/MLD combination technology in dielectric materials and water vapor barrier materials are introduced. Finally, a summary is given, and it is pointed out that ALD and MLD techno-logy will play an increasingly important role in advanced chip device process.
Key words:  atomic layer deposition    molecular layer deposition    semiconductor    advanced process    thin film
出版日期:  2024-10-25      发布日期:  2024-11-05
ZTFLH:  TN05  
基金资助: 湖北省自然科学基金青年基金(2022CFB858)
通讯作者:  * 赵波,湖北九峰山实验室主任工程师。博士毕业于根特大学(Ghent University)固体科学系物理学专业。2021年11月加入湖北九峰山实验室,主要从事半导体先进工艺的开发与研究,发表论文10余篇,包括Journal of Energy Chemistry、Journal of Chemistry Materials A、ACS Applied Materials & Interfaces、Advanced Materials Interfaces等。bozhaocas@hotmail.com   
引用本文:    
赵波, 柳俊. 原子层/分子层沉积技术及其在半导体先进工艺中的应用[J]. 材料导报, 2024, 38(20): 23030081-12.
ZHAO Bo, LIU Jun. Atomic/Molecular Layer Deposition Technology and Its Application in Advanced Process of Semiconductor. Materials Reports, 2024, 38(20): 23030081-12.
链接本文:  
http://www.mater-rep.com/CN/10.11896/cldb.23030081  或          http://www.mater-rep.com/CN/Y2024/V38/I20/23030081
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