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《材料导报》期刊社  2018, Vol. 32 Issue (13): 2176-2182    https://doi.org/10.11896/j.issn.1005-023X.2018.13.006
  无机非金属及其复合材料 |
稀磁掺杂MnxGe1-x量子点的制备及应用
李广洋, 杨杰, 邱锋, 王荣飞, 王茺, 杨宇
云南大学材料科学与工程学院,昆明 650091
Preparation and Application of Dilute Magnetic Doping of MnxGe1-x Quantum Dots
LI Guangyang, YANG Jie, QIU Feng, WANG Rongfei, WANG Chong, YANG Yu
School of Materials Science and Engineering,Yunnan University,Kunming 650091
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摘要 作为一种新兴的稀磁掺杂半导体材料,MnxGe1-x量子点的自旋电子学性能在最近几年内取得了较为重大的突破。本文针对现有MnxGe1-x量子点的稀磁掺杂制备方法及与制备方法相关联的磁电子学性能展开论述,并详细介绍了MnxGe1-x量子点在生长过程中Mn原子与生长表面之间的相互作用、形貌转变以及迄今为止对基于这种纳米材料进行的自旋电子学应用的尝试。最后,展望了MnxGe1-x量子点未来研究的重点和亟待解决的问题。
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李广洋
杨杰
邱锋
王荣飞
王茺
杨宇
关键词:  MnxGe1-x量子点  掺杂  铁磁性  居里温度    
Abstract: As a new kind of diluted magnetic semiconductor materials, the study on spintronics properties of the MnxGe1-x quantum dots have made a great breakthrough in recent years. The current preparation method of the diluted magnetic doping MnxGe1-x quantum dots and its related magnetic properties have been well discussed. The interaction between Mn ion and growth surface, morphology evolution, and attempts for spintronics application based on such nanomaterials have also been introduced in detailed. At the end of this article, we focus on the key spot of the research and the problems that need to be solved for the application of MnxGe1-x quantum dots in the near future.
Key words:  MnxGe1-x quantum dots    doping    ferromagnetism    Cuire temperature
               出版日期:  2018-07-10      发布日期:  2018-08-01
ZTFLH:  TB332  
基金资助: 国家自然科学基金(11564043;11274266);云南省教育厅重点项目(2015Z017);云南省科技计划面上项目(2016FB002);云南省引进高层次人才项目;云南大学研究生科研创新基金项目
通讯作者:  王茺:通信作者,男,1978年生,博士,副研究员,硕士研究生导师,研究方向为低维纳米光电子材料与器件 E-mail:cwang@ynu.edu.cn   
作者简介:  李广洋:女,1993年生,硕士研究生,从事稀磁掺杂半导体光磁电性能的研究 E-mail:601298153@qq.com
引用本文:    
李广洋, 杨杰, 邱锋, 王荣飞, 王茺, 杨宇. 稀磁掺杂MnxGe1-x量子点的制备及应用[J]. 《材料导报》期刊社, 2018, 32(13): 2176-2182.
LI Guangyang, YANG Jie, QIU Feng, WANG Rongfei, WANG Chong, YANG Yu. Preparation and Application of Dilute Magnetic Doping of MnxGe1-x Quantum Dots. Materials Reports, 2018, 32(13): 2176-2182.
链接本文:  
http://www.mater-rep.com/CN/10.11896/j.issn.1005-023X.2018.13.006  或          http://www.mater-rep.com/CN/Y2018/V32/I13/2176
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