Abstract: Generally, the failure of solder joint in electronic products may cause the entire product to be scrapped. In this case, the recycling of electronic components is of great significance for saving resources. It is worth pointing out that the effective reuse of electronic components rely on perfect separation of welding interface of them. Aiming at paving the way for developing a feasible interface separation technique theoretically, mole-cular dynamics simulation was carried out to study the effects of electric field direction and strength on the diffusion behavior of atoms at Cu/Cu3Sn interface. It was found that the direction of the electric field played a critical role in affecting the diffusion behavior of the atoms at Cu/Cu3Sn interface. Under the same conditions, the diffusion of atoms were more likely to occur in the models under a positive electric field than that in the one without electric field. Furthermore, study on the diffusion behavior of atoms at Cu/Cu3Sn interface under electric fields of diverse intensities were conducted. As could be seen from the results, the increase of electric field intensities contributed to raising the intrinsic diffusion coefficient of Cu3Sn atoms near the interface, while lowering the intrinsic diffusion coefficient of atoms in Cu crystal, so as to enlarge the difference in diffusion coefficient of interface atoms. Consequently, more obvious Kirkendall effect would be produced, which was beneficial to the separation of Cu/Cu3Sn interface.
郭丽婷, 李晓延, 姚鹏, 李扬. 电场作用下Cu/Cu3Sn界面原子扩散行为的分子动力学模拟[J]. 材料导报, 2020, 34(2): 2137-2141.
GUO Liting, LI Xiaoyan, YAO Peng, LI Yang. Molecular Dynamics Simulation of Diffusion Behavior of Atoms at the Interface of Cu/Cu3Sn Under Electric Field. Materials Reports, 2020, 34(2): 2137-2141.
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2020, Vol. 34 
