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材料导报  2025, Vol. 39 Issue (21): 24100167-12    https://doi.org/10.11896/cldb.24100167
  金属与金属基复合材料 |
面向存储和神经形态计算应用的CBRAM发展综述
杨瀚1,2, 刘国柱1,2,3,*, 魏轶聃1,2, 赵伟1,2,3, 魏应强1,2, 周颖1,2, 隋志远1,2, 刘美杰1,2, 尤兴宇1,2, 魏敬和1,2,3
1 中国电子科技集团公司第五十八研究所,江苏 无锡 214035
2 集成电路与微系统全国重点实验室,江苏 无锡 214035
3 空天集成电路与微系统工信部重点实验室,南京 211106
A Review of CBRAM Development for Memory and Neuromorphic Computing Applications
YANG Han1,2, LIU Guozhu1,2,3,*, WEI Yidan1,2, ZHAO Wei1,2,3, WEI Yingqiang1,2, ZHOU Ying1,2, SUI Zhiyuan1,2, LIU Meijie1,2, YOU Xingyu1,2, WEI Jinghe1,2,3
1 The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, Jiangsu, China
2 National Key Laboratory of Integrated Circuits and Microsystems, Wuxi 214035, Jiangsu, China
3 Key Laboratory of Aerospace Integrated Circuits and Microsystem, Ministry of Industry and Information Technology, Nanjing 211106, China
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摘要 导电桥式随机存储器(CBRAM)作为一种新兴的非易失性存储器技术,近年来在半导体存储领域引起了广泛关注。随着物联网(IoT)、可穿戴设备、移动计算等应用的快速发展,对存储器的性能、功耗、尺寸和成本提出了更高的要求,CBRAM等新一代存储器技术应运而生。本文阐述了CBRAM的基本概念与基本结构;详细分析了不同介质层中导电细丝的形成机理;对比了不同电极材料和介质层材料制备的器件电学性能的差异;介绍了CBRAM在存储器及神经形态计算领域的应用;总结了忆阻器面临的挑战并对未来的进一步发展提出了建议。
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杨瀚
刘国柱
魏轶聃
赵伟
魏应强
周颖
隋志远
刘美杰
尤兴宇
魏敬和
关键词:  导电桥式随机存储器  阻变机制  介质层材料  电极材料  存储器  神经形态计算    
Abstract: As an emerging non-volatile memory technology, conductive bridge random access memory (CBRAM) has attracted extensive attention in the semiconductor memory field in recent years. With the rapid development of applications such as the Internet of Things (IoT), wearable devices, and mobile computing, higher requirements have been imposed on the performance, power consumption, size, and cost of memories. Consequently, new-generation memory technologies like CBRAM have emerged. This paper elaborates on the basic concepts and structures of CBRAM; it conducts a detailed analysis of the formation mechanisms of conductive filaments in different dielectric layers; it compares the electrical performance differences of devices fabricated with different electrode materials and dielectric layer materials; it introduces the applications of CBRAM in the fields of memory and neuromorphic computing; and it summarizes the challenges faced by CBRAMs and provides suggestions for their further development.
Key words:  conductive bridge random access memory    resistance switching mechanism    dielectric layer material    electrode material    memory    neuromorphic computing
出版日期:  2025-11-10      发布日期:  2025-11-10
ZTFLH:  TN389  
基金资助: 国家自然科学基金(U24B6015;62204233;62174150);江苏省重点研发计划(BE2023005);“太湖之光”科技攻关(K20221055);集成电路与微系统全国重点实验室(JCYQ2310803-1)
通讯作者:  *刘国柱,博士,中国电子科技集团公司第五十八研究所研究员、硕士研究生导师。目前主要从事抗辐照反熔丝、FLASH等方向器件及工艺研究。gzliucetc@163.com   
作者简介:  杨瀚,中国电子科技集团公司电子科学研究院硕士研究生,在刘国柱研究员的指导下进行研究。目前主要研究领域为导电桥式随机存储器。
引用本文:    
杨瀚, 刘国柱, 魏轶聃, 赵伟, 魏应强, 周颖, 隋志远, 刘美杰, 尤兴宇, 魏敬和. 面向存储和神经形态计算应用的CBRAM发展综述[J]. 材料导报, 2025, 39(21): 24100167-12.
YANG Han, LIU Guozhu, WEI Yidan, ZHAO Wei, WEI Yingqiang, ZHOU Ying, SUI Zhiyuan, LIU Meijie, YOU Xingyu, WEI Jinghe. A Review of CBRAM Development for Memory and Neuromorphic Computing Applications. Materials Reports, 2025, 39(21): 24100167-12.
链接本文:  
https://www.mater-rep.com/CN/10.11896/cldb.24100167  或          https://www.mater-rep.com/CN/Y2025/V39/I21/24100167
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