Abstract: The combination of noble metal with semiconductor can produce the Schottky junction. Schottky junction possesses rectification property and low interface voltage, which can be uesd to control the production and flow of photoinduced electrons. Therefore, over the photocatalyst with Schottky junction, the separation of photoinduced electrons and holes can be effectively promoted and the photocatalytic efficiency is expected to be improved. In this paper, the progress in Schottky semiconductor photocatalyst is summarized. The effects of crystal facet deposition, morphological structure, surface plasmon resonance and co-doping on the photocatalytic performance of the Schottky junction photocatalyst are analyzed. The application prospect in environmental control including the degradation of pollutants, hydrogen production and carbon dioxide reduction are discussed. The research directions of barrier height, product control and the reusing of catalyst are proposed. The unique property of Schottky photocatalyst can lead to a research hot spot and more applications are also expected in the near future.
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