Study on Stress Distribution of Photovoltaic Monocrystalline Silicon Sheet During Washing
LI Tao1, LYU Guoqiang2, LI Yuxian1,*, QIAN Yichao1, ZHANG Jie1
1 Faculty of Mechanical and Electrical Engineering, Kunming University of Science and Technology, Kunming 650500, China 2 School of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
Abstract: In the process of washing photovoltaic monocrystalline silicon wafer, the maximum stress may cause damage to the silicon wafer. The determination of the distribution of the stress on the silicon wafer and the maximum stress position on the silicon wafer are of great significance to reduce the damage of the silicon wafer. In this work, based on the Levy solution model of the short-shaped plate, the deflection and stress values of the silicon wafers of different sizes are calculated. Then, ABAQUS finite element software is used to simulate the stress generated in the process of silicon wafer washing. The results show that the maximum stress value appears on the free edge (y=b) or the fixed edge (y=0) when the wafer's aspect ratio b/a=2, 1 and 0.5 are calculated by using the Levy solution model of the short-shaped plate. When the wafer width a is fixed and the length b is gradually increased, the stress value is maximum when the aspect ratio b/a=0.5 on the fixed side, and the stress value is maximum when the aspect ratio b/a=0.9 on the free side. When the aspect ratio of the silicon wafer b/a=0.1—1.5, the maximum stress of the silicon wafer is distributed on the solid support edge, and when the aspect ratio of the silicon wafer b/a=1.5—2, the maximum stress of the silicon wafer is distributed on the free edge. The determination of the maximum stress position by the maximum deflection can reduce a lot of calculation, but it is not comprehensive and accurate. The results obtained by ABQUS finite element analysis are consistent with the stress distribution calculated by Levy solution model of rectangular plate, but there are some errors in the stress value. By combining the results of Levy solution model of rectangular plate with Mohr theory, the relation formula between the washing pressure and the thickness of silicon wafer is derived. When the thickness of the silicon wafer is determined, the maximum washing pressure that can be borne on the silicon wafer can be calculated; conversely, when the washing pressure is determined, the minimum thickness that will not be destroyed when the silicon wafer is washed can be obtained.
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2025, Vol. 39 
