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材料导报  2023, Vol. 37 Issue (15): 22040268-10    https://doi.org/10.11896/cldb.22040268
  金属与金属基复合材料 |
“后摩尔时代”芯片互连方法简析
张墅野1,2,*, 初远帆1, 李振锋1, 鲍俊辉1, 张雨杨1, 刘一甫1, 易庆鸿1, 崔澜馨1, 何鹏1,*
1 哈尔滨工业大学先进焊接与连接国家重点实验室,哈尔滨 150000
2 中国科学院硅器件技术重点实验室,北京 100000
A Brief Introduction of the ‘More than Moore Era' Chip Interconnection Method
ZHANG Shuye1,2,*, CHU Yuanfan1, LI Zhenfeng1, BAO Junhui1, ZHANG Yuyang1, LIU Yifu1, YI Qinghong1, CUI Lanxin1, HE Peng1,*
1 State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150000, China
2 Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100000, China
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摘要 随着半导体制程接近工艺物理极限,半导体工业进入“后摩尔时代”,集成技术成为继续提高电子产品性能的重要途径。现存的实现高度集成的关键技术都对更小尺寸的连接提出了要求。同时随着连接尺寸的减小,封装体在连接工艺中受到的影响导致器件在使用温度下失效的问题越来越严重。封装内的互连部分是芯片热传导、电气连接的重要结构,也是器件失效的重要部位,在互连接头尺寸不断减小的背景下,互连部分的失效在器件整体失效的情况中占据着越来越重要的地位,研究高导热、低工艺影响的微纳连接技术有望解决高功率密度器件的可靠性问题。本文总结了微纳连接技术在新型焊料、能量传递方式两方面的发展,简单介绍了表面活化技术并讨论其应用在电子封装中的可能性,在此基础上讨论了微纳连接技术的发展方向。
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张墅野
初远帆
李振锋
鲍俊辉
张雨杨
刘一甫
易庆鸿
崔澜馨
何鹏
关键词:  微纳连接  表面活化键合  低温焊料  纳米焊料  电子束辐照  超声连接    
Abstract: With the semiconductor process approaching its physical limit, the semiconductor industry has gradually entered the ‘More than Moore era'. Integrated technology is an important way to continue to improve the performance of electronic products. The key technologies to achieve high integration all require smaller size connections. With the decrease of connection size, the failure of devices at service temperature is beco-ming more and more serious due to the influence of the connection process on the package. Interconnection is an important way of chip heat conduction. Micro nano connection technology with high thermal conductivity and low process impact is expected to solve the reliability problem of high-power density devices. This paper summarizes the development of micro nano connection technology in new solders and energy transfer methods, briefly introduces the surface activation technology and discusses the possibility of its application in electronic packaging, and on this basis, briefly discusses the development direction of micro nano connection technology.
Key words:  micro nano connection    surface actived bonding    low temperature solder    nano solder    electron beam irradiation    ultrasonic connection
出版日期:  2023-08-10      发布日期:  2023-08-07
ZTFLH:  TG4  
基金资助: 中国科学院硅器件技术重点实验室开放基金(KLSDTJJ2022-5);国家重点研发计划(2020YFE0205300);重庆市自然科学基金(cstc2021jcyj-msxmX1002);中央高校基本科研业务费专项资金(AUGA5710051221);黑龙江省自然科学基金 (YQ2022E024)
通讯作者:  * 张墅野,哈尔滨工业大学电子封装技术专业副教授、博士研究生导师。2012年哈尔滨工业大学电子封装技术专业本科毕业,2014年KAIST韩国先进科学技术院硕士毕业,2017年KAIST韩国先进科学技术院材料科学与工程专业博士毕业。2020年至今于哈尔滨工业大学电子封装技术专业任副教授。目前主要从事先进电子封装、光烧结柔性印刷电子技术、先进纳米材料与高端电子器件系统集成与封装方面的研究工作。发表SCI/EI文章61篇,包括Nano Energy、Progress in Natural Science-Materials International等。获2020年中国机械工业科学技术奖科技进步类特等奖、2019年中国机械工业科学技术科技进步三等奖、2020年中国产学研合作创新成果二等奖。syzhang@hit.edu.cn;何鹏,哈尔滨工业大学电子封装技术专业教授、博士研究生导师。1995年哈尔滨工业大学金属材料及工艺系本科毕业,1997年哈尔滨工业大学硕士毕业,2001年哈尔滨工业大学材料科学与工程学院博士毕业。2008至今任哈尔滨工业大学先进焊接与连接国家重点实验室教授、博士生导师。目前主要从事钎焊、微连接、连接界面行为与控制的基础理论与实际应用技术研究。主持和参加国家自然基金、国家973、863等课题20余项。获教育部自然科学奖一等奖1项,授权国家发明专利52项;已发表论文500余篇。nanojoin@hit.edu.cn   
引用本文:    
张墅野, 初远帆, 李振锋, 鲍俊辉, 张雨杨, 刘一甫, 易庆鸿, 崔澜馨, 何鹏. “后摩尔时代”芯片互连方法简析[J]. 材料导报, 2023, 37(15): 22040268-10.
ZHANG Shuye, CHU Yuanfan, LI Zhenfeng, BAO Junhui, ZHANG Yuyang, LIU Yifu, YI Qinghong, CUI Lanxin, HE Peng. A Brief Introduction of the ‘More than Moore Era' Chip Interconnection Method. Materials Reports, 2023, 37(15): 22040268-10.
链接本文:  
http://www.mater-rep.com/CN/10.11896/cldb.22040268  或          http://www.mater-rep.com/CN/Y2023/V37/I15/22040268
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