Direct Electrodeposition and Chemical Formation Mechanism of Copper Oxide-Silica Composite Thin Films
GU Min1,2,*, WU Yazhen1,2
1 State Key Laboratory of Coal Mine Disaster Dynamics and Control, Chongqing University, Chongqing 400044, China 2 School of Resources and Safety Engineering, Chongqing University, Chongqing 400044, China
Abstract: Composited thin films of copper oxide-silica were electrodeposited directly on an ITO substrate at room temperature using Cu(II)-Cit3--SiO2 sol with nCu2+∶nCit3-of 2∶1 as a electrolyte. Cyclic voltammetry(CV)and X-ray diffraction(XRD)results indicate that Cu2O-SiO2 gel films are formed by copper ions co-deposition with SiO2 sol adsorbed on electrode. The adsorbed amount of SiO2 sol on the ITO electrode decreased with the increases of overpotentials. XRD and chronoamperometric(CA)results show that the adsorption amount of SiO2 in the film decreases with the increase of the overpotential. The results of X-ray photoelectron spectroscopy(XPS), XRD and energy dispersive X-ray(EDX)showed that CuO/Cu2O-SiO2 films were obtained at higher overpotentials, which was consistent with the results of particles with two different morphologies in the films obtained by scanning electron microscopy(SEM). The CuO/Cu2O-SiO2 films are formed by the co-deposition of SiO2 and Cu(II)with OH generated by hydrogen evolution.
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2023, Vol. 37 
