Structure Design and Simulation of Solar Blind Ultraviolet Silicon/Diamond Heterojunction Photodiode
DENG Kangning, XIAO Qingquan*, CHEN Hao, WANG Aoshuang, WANG Jiangxiang
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
Abstract: Diamond is a semiconductor material with its low cost, nontoxic, and high chemical stability, which is also one of the ideal materials for ultra-violet photodiode. Its application in ultraviolet photodiode made it possible to replace the currently widely used ultraviolet photodiodes containing rare noble metal elements in the future. The device structure of solar blind ultraviolet silicon/diamond heterojunction photodiode was constructed by using Atlas module in Silvaco software. The effects of thickness and doping concentration on dark current, spectral response and transient response of photodiode were studied, and the dark current, reverse breakdown voltage and doping concentration of photodiode after preliminary optimization were obtained. The simulation results show that the silicon/diamond pin heterojunction photodiode has higher responsivity in the spectral range of 10—220 nm than that of the silicon/diamond pn heterojunction photodiode. When the peak wavelength is 220 nm, the maximum spectral response current of the photodiode is 1.7×10-11 A. The dark current of the pin heterojunction photodiode is approximately 5.6×10-15 A, which is smaller than that of the pn heterojunction photodiode. The work will lay a good foundation for the further structure optimization and the fabrication of high-performance silicon/diamond heterojunction photodiode.
1 Xia M Z. Study on photoelectric sensor based on photoinduced homojunction amorphous ZnSnO3. Master’s Thesis, Tianjin University, China, 2019(in Chinese). 夏梦真. 基于光诱导同质结非晶ZnSnO3紫外光电传感器的研究. 硕士学位论文, 天津大学, 2019. 2 Toshio K, Hideo H. Npg Asia Materials, 2010, 2, 15. 3 Shen Y. Study on the growth and properties of diamond films and heterojunctions. Master’s Thesis, Nanjing University, China, 2019(in Chinese). 沈洋. 金刚石薄膜及异质结的生长与性质研究. 硕士学位论文, 南京大学, 2019. 4 Ma Y, Wang L J, Liu J M, et al. Journal of Vacuum Science and Technology, 2006, 26(6), 475(in Chinese). 马莹, 王林军, 刘健敏, 等. 真空科学与技术学报, 2006, 26(6), 475. 5 Wolter S D, Okuzumi F, Sitar Z, et al. Thin Solid Films, 2003, 440, 145. 6 Jia Y M, Yang B C. Journal of Vacuum Science and Technology, 1997, 17(4), 283(in Chinese). 贾宇明, 杨邦朝. 真空科学与技术学报, 1997, 17(4), 283. 7 Wu Y Z, Tong J W, Ruan L X, et al. Computational Materials Science, 2021, 196, 1. 8 Li L. Study on inorganic perovskite and diamond film optoelectronic devices. Master’s Thesis, Zhengzhou University, China, 2018(in Chinese). 李乐. 无机钙钛矿及金刚石薄膜光电器件研究. 硕士学位论文, 郑州大学, 2018. 9 Madelung O. Semiconductors: Data handbook, 3rd edition, Springer, Germany, 2004, pp. 44. 10 Wang F S, Liu F, Wang J H, et al. Journal of Wuhan Institute of Technology, 2020, 42(5), 518(in Chinese). 王凡生, 刘繁, 汪建华, 等. 武汉工程大学学报, 2020, 42(5), 518. 11 Wang Y F, Dai X P, Zhou W. High Power Converter Technology, 2016, 34(4), 34(in Chinese). 王亚飞, 戴小平, 周维. 大功率变流技术, 2016, 34(4), 34. 12 Niu L M. Research on key technology of diamond film radiation detector. Master’s Thesis, North University of China, China, 2021(in Chinese). 牛刘敏. 金刚石薄膜辐射探测器关键技术研究. 硕士学位论文, 中北大学, 2021. 13 Zhang Y X. Simulation and experimental study of diamond photoconductivity devices. Master’s Thesis, Xidian University, China, 2020(in Chinese). 张玉玺. 金刚石光电导器件的仿真与实验研究. 硕士学位论文, 西安电子科技大学, 2020. 14 Zhu M. Study on the performance of graphene/silicon heterojunction photodetector. Ph. D. Thesis, Tsinghua University, China, 2015(in Chinese). 朱淼. 石墨烯/硅异质结光电探测器性能研究. 博士学位论文, 清华大学, 2015. 15 Iakovleva N I. Journal of Communications Technology and Electronics, 2021, 66, 368. 16 Hu W T. Design and research of detection optical system. Master’s Thesis, Changchun University of Science and Technology, China, 2008(in Chinese). 胡玮通. 探测光学系统设计研究. 硕士学位论文, 长春理工大学, 2008. 17 Shi Y L. Study on silicon-based near infrared photodetectors based on lead quantum dots. Ph. D. Thesis, University of Electronic Science and Technology of China, China, 2021(in Chinese). 石沅林. 基于铅族量子点的硅基近红外光电探测器研究. 博士学位论文, 电子科技大学, 2021.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2023, Vol. 37 
