Microscopic Mechanism and Research Progress of the Effects of Element Doping on the Properties of ITO Thin-film Materials
ZHANG Yiwen1,2,*, SONG Wanqing2, ZHANG Shiyu2, XIE Guijiu2, JI Huiming1,2
1 Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University, Tianjin 300350, China 2 School of Materials Science and Engineering, Tianjin University, Tianjin 300350, China
Abstract: Transparent conductive oxides (TCOs) are heavily-doped semiconductor materials, which are widely used in the fields like liquid crystal displays, touch screens and solar cells. They exhibit a high conductivity close to that of metal, because of a large number of free electrons produced by heavy doping and high degeneracy. Moreover, TCOs maintain larger band gap, which provides high visible light transmittance. As a kind of TCOs material, indium tin oxide (ITO) thin film has excellent photoelectric properties, such as wide band gap, high visible light transmission, high near-infrared reflection and low resistivity. Therefore, ITO thin film becomes the most widely used TCOs in the world, with a market share of 97%. At present, ITO thin film still has some shortcomings to be solved, such as higher cost of Indium. Moreover, ITO show poor light transmittance in the near-infrared region and brittleness, which cannot meet the requirements of modern optoelectronic devices for flexibility. With the development of science and technology and the upgrading of various electronic components, ITO thin films can no longer meet the needs of applications nowadays. How to further improve the properties of ITO thin films has become a hot research topic. Element doping can improve the overall performance of the ITO thin film. For example, free electrons will be generated by the inequivalent replacement of high-valent metal elements. The photoelectric properties of the thin film can be enhanced by optimizing carrier concentration, carrier mobility and scattering mechanism. The mechanical properties also can be modulated by introducing impurity elements, which inhibit surface migration, the crystallization and reduce internal stress of the thin film. In addition, element doping can promote the formation of passivation layer and stable chemical bonds to deal with harsh working conditions, such as high temperature, high pressure and strong corrosive environment. This article summarizes the research progress of element-doped ITO thin films. The effects of element doping on photoelectric properties, mechanical properties and stability of ITO thin films are introduced, respectively. Moreover, this review discusses the existing problems in current research, and the development direction of element doping in ITO thin films.
作者简介: 张亦文,天津大学材料科学与工程学院副教授、硕士研究生导师。2004年7月本科毕业于浙江大学,2009年7月在中国科学院上海硅酸盐研究所取得了材料物理与化学专业的工学博士学位,2009-2013年,在日本东北大学进行了博士后研究工作。2013年,晋升为日本东北大学助理教授。2017年回国后,入选天津市 “千人计划”青年项目。主要从事磁电复合薄膜,生物相容性功能薄膜及光电传感材料的研究工作。近年来,在磁电材料,生物相容性材料及光电传感材料领域发表论文30余篇,包括:Applied Physics Letters, Journal of Physics D-Applied Physics, Journal of Magnetism and Magnetic Materials, Corrosion Science等。申请国家发明专利8项。
引用本文:
张亦文, 宋晚晴, 张士雨, 谢贵久, 季惠明. 元素掺杂对ITO薄膜材料性能影响的微观机制及研究进展[J]. 材料导报, 2022, 36(23): 21010015-9.
ZHANG Yiwen, SONG Wanqing, ZHANG Shiyu, XIE Guijiu, JI Huiming. Microscopic Mechanism and Research Progress of the Effects of Element Doping on the Properties of ITO Thin-film Materials. Materials Reports, 2022, 36(23): 21010015-9.
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2022, Vol. 36 
