Study on Photoelectric Degradation of ITO Film Under Annealing
LIU Zhenhua1,2, WANG Yixin2, MEI Yunjian2, SHAN Hengsheng3,*
1 Zhejiang University Changzhou Industrial Technology Research Institute, Changzhou 213002, Jiangsu,China 2 School of Materials Science & Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China 3 School of Physics & Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
Abstract: Indium tin oxide (ITO) films play an extremely important role as transparent electrodes in the field of optoelectronics. This paper investigates the degradation behavior of the photoelectric properties of ITO thin films under annealing is investigated from an experimental point of view, with a focus on analyzing the internal mechanism of annealing temperature on the degradation of ITO thin film optoelectronic properties from the perspectives of element state and surface morphology. In this study, ITO films were prepared by DC magnetron sputtering on ordinary transparent glass and characterized by means of high-resolution X-ray diffractometry (HRXRD), UV-visible spectroscopy, four-probe test, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The results showed that compared to unannealed samples, the transmittance at 618 nm decreased by 4.83% at 250 ℃ in the low-temperature range (50, 100, 200, 250 ℃), with electrical properties remaining largely unchanged. At high temperatures (300, 500, 700, 800 ℃), the transmittance at 618 nm decreased by 13.29% at 700 ℃ and 50.28% at 800 ℃ compared to the unannealed state. Electrical properties exhibited significant degradation beyond 500 ℃, with surface resistance increasing by 533.21% at 700 ℃ compared to the unannealed state. It was found that increase in the number of oxygen vacancies induced by decreasing transmittance was consistent with the increase of annealing temperature. At the same time, the degradation of surface morphology and electrical pro-perties of ITO thin films were consistent. Therefore, the increase of oxygen vacancies and the deterioration of surface morphology in ITO thin films degraded their optoelectronic properties. This study helps to reveal the laws affecting the optoelectronic properties of ITO thin films under the annealing process, and provides an experimental basis for the preparation of high-quality ITO thin film electrodes.
刘振华, 王一心, 梅云俭, 单恒升. 退火工艺下氧化铟锡薄膜光电性能退化规律研究[J]. 材料导报, 2026, 40(8): 25040220-6.
LIU Zhenhua, WANG Yixin, MEI Yunjian, SHAN Hengsheng. Study on Photoelectric Degradation of ITO Film Under Annealing. Materials Reports, 2026, 40(8): 25040220-6.
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2026, Vol. 40 
