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《材料导报》期刊社  2017, Vol. 31 Issue (24): 91-95    https://doi.org/10.11896/j.issn.1005-023X.2017.024.018
  材料研究 |
基于外加热激励源的中红外激光辐照VO2薄膜温升研究
侯典心1,2,3,路 远1,2,3,刘志伟1,2,3,胡 杰1,2,3
1 解放军电子工程学院,合肥 230037;
2 红外与低温等离子体安徽省重点实验室,合肥 230037;
3 脉冲功率激光技术国家重点实验室,合肥 230037
Temperature Rising in VO2 Thin Films Under Irradiation of Mid-infrared Laser Based on External Heat Source
HOU Dianxin1,2,3, LU Yuan1,2,3, LIU Zhiwei1,2,3, HU Jie1,2,3
1 Electronic Engineering Institute of PLA, Hefei 230037;
2 Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, Hefei 230037;
3 State Key Laboratory of Pulsed Power Laser Technology, Hefei 230037
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摘要 VO2薄膜在中红外激光防护领域有着重要意义。为研究中红外激光辐照VO2薄膜的温升累积效应及克服中红外激光器功率过小的困难,设计了一种外加热激励源的实验方法。首先利用ANSYS软件对中红外纳秒脉冲激光在不同激励源温度和不同功率密度下辐照VO2薄膜的温升累积进行仿真,并做了实际验证。研究发现,随着外加激励温度的升高,可在一定时间(100 s)内达到VO2相变温度的激光功率密度逐渐减小,通过增加功率密度,也可以进一步降低相变所需的激励源温度。两者均提高了VO2薄膜的温升速率。然后在激励源温度为40 ℃、中红外激光功率密度为1 W/mm2的条件下研究了中红外纳秒脉冲激光参数对VO2薄膜的温升累积效应,结果表明,增加激光脉宽、增加重频或光斑半径均能有效增加VO2薄膜的温升速率。
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侯典心
路 远
刘志伟
胡 杰
关键词:  VO2薄膜  中红外纳秒脉冲激光  外加热激励源  温升累积效应    
Abstract: The VO2 thin film has shown a great significance in the field of mid-infrared laser protection. To research the cumulative effects of temperature rise of VO2 thin films under the irradiation of mid-infrared laser and to overcome the low power difficulty, a kind of external heat source method was designed. At first, the temperature accumulation of VO2 thin film under mid-infrared nanosecond pulse laser irradiation at different temperature of external heat source and different power density was simulated by ANSYS software and verified in practice. It was shown that the laser power density, which could induce phase transition temperature within a certain time (100 s), decreased gradually with the increase of external heat source temperature. The essential temperature could be also reduced by increasing laser power density. And both of them could improve the temperature rising rate of VO2 thin films. Then the temperature accumulation effect of VO2 thin films irradiated by different mid-infrared nanosecond pulse laser parameters under the condition of 40 ℃ external heat source temperature and 1 W/mm2 infrared laser power density was researched. The results showed that expanding laser pulse width, increasing repetition frequency and increasing facula radius could effectively increase the temperature rising rate of VO2 thin films.
Key words:  VO2 thin films    mid-infrared nanosecond pulse laser    external heat source    temperature accumulation effect
出版日期:  2017-12-25      发布日期:  2018-05-08
ZTFLH:  TB321  
基金资助: 脉冲功率激光技术国家重点实验室主任基金(SKL2013ZR03)
通讯作者:  路远:男,1971年生,教授,主要研究方向为光学工程 E-mail:luyuanmail@163.com   
作者简介:  侯典心:男,1993年生,硕士研究生,主要从事红外光学与材料研究 E-mail:1911240818@qq.com
引用本文:    
侯典心,路 远,刘志伟,胡 杰. 基于外加热激励源的中红外激光辐照VO2薄膜温升研究[J]. 《材料导报》期刊社, 2017, 31(24): 91-95.
HOU Dianxin, LU Yuan, LIU Zhiwei, HU Jie. Temperature Rising in VO2 Thin Films Under Irradiation of Mid-infrared Laser Based on External Heat Source. Materials Reports, 2017, 31(24): 91-95.
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https://www.mater-rep.com/CN/10.11896/j.issn.1005-023X.2017.024.018  或          https://www.mater-rep.com/CN/Y2017/V31/I24/91
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