Study on the Nano-grinding Mechanism of 6H-SiC Based on Molecular Dynamics
GENG Ruiwen1, ZHOU Xingchen2, TIAN Zhuxin2,*, XIE Qiming3, LI Lijun2, WU Haihua1, SHUANG Jiajun2, YANG Zhijiang2
1 Hubei Engineering Research Center of Graphite Additive Manufacturing Technology and Equipment, China Three Gorges University, Yichang 443002, Hubei, China 2 College of Mechanical and Power Engineering, China Three Gorges University, Yichang 443002, Hubei, China 3 Kunming Institute of Physics, Kunming 650223, China
Abstract: 6H-SiC, as a representative of advanced semiconductor materials, exhibits outstanding physical properties and chemical stability, playing a pivotal role in high-tech industries such as optoelectronics and aerospace. Its high hardness and low fracture toughness present a great challenge in ultra-precision machining. Consequently, this study employs molecular dynamics simulation to investigate the nano-grinding behavior of 6H-SiC under different abrasive shapes (spherical, truncated cone, quadrangular frustum pyramid) and analyzes the influence of grinding depth on nano-grinding characteristics comprehensively. The results indicated that quadrangular frustum pyramid abrasives demonstrate optimal material removal efficiency, albeit accompanied by the largest subsurface damage. Under deeper grinding conditions, the spherical abrasive particles exhibit a material removal rate that surpasses that of the truncated cone particles, and they induce less subsurface damage. Furthermore, as grin-ding depth increases, a transition of the material removal mechanism occurrs, accompanied by increased grinding force and temperature, while the impact of abrasive shape on grinding quality becomes more pronounced. These findings provide a theoretical foundation for optimizing processing parameters of hard brittle materials like 6H-SiC.
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2025, Vol. 39 
