Crucible Material Technology for AlN Crystal Growth via PVT Method
WANG Jiabin1, CHEN Hongmei1,2, YUAN Chao1
1 Hunan Provincial Key Laboratory of Fine Ceramics and Powder Materials, Hunan University of Humanities Science & Technology, Loudi 417000 2 Hunan International Economics University, Changsha 410205
Abstract: Aluminum nitride (AlN) is one of the most important third-generation wide-gap semiconductor materials, which has excellent properties such as wide band gap, high melting point, high critical breakdown field strength, high temperature thermal stability and chemical corrosion resistance. As a widely used technology of AlN crystal growth, Physical Vapor Phase Transport method (PVT) has a harsh process conditions and environment. Long life crucible with high temperature resistance and corrosion resistance has become one of the technical problems for a big size, high quality AlN crystal growth. This paper introduces the principle and method of AlN crystals PVT growth process, and analyses the performance requirements of the crucible material for the crystal growth. The preparation techniques of TaC crucible and TaC coated graphite crucible are reviewed.
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2021, Vol. 35 
