Structural Parameters Optimization of Backside of N-type Silicon Back-contact Heterojunction Solar Cells
LU Gang1, YANG Zhenying1, HE Fengqin1, ZHENG Lu1, QIAN Jun1, FENG Xianfeng2, GAO Jiaqing2
1 Qinghai Huanghe Hydropower Development Co., LTD Photovoltaic Industry Technology Branch, Xining 810007 2 Automation and Electric Information Department Xi’an University of Technology, Xi’an 710048
Abstract: In this work,the effects of backside structural parameters as emitter width, back surface electric field width and isolation layer width on the HIBC crystalline silicon solar cell output properties were simulated by Silvaco-TCAD semiconductor device simulation software.The influences of backside structural parameters on HIBC solar cell’s short-circuit current, open-circuit voltage, fill factor and conversion efficiency were analyzed comprehensively. The optimization parameters of HIBC solar cell’s backside structure are as follows: the thickness of the backside intrinsic amorphous silicon film is 3 nm, the P type emitter junction width is 700 μm, the backside surface electric field width is 100 μm, the p-a-Si doping concentration is 1×1019 cm-3, and n-a-Si doping concentration is 5×1019 cm-3.
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2019, Vol. 33 
