Abstract: With the development of three-dimensional package interconnects decreasing their sizes into sub-micro levels, problems such as high current density, high-stress, and difficulty heat dissipation have become more and more serious. The phenomenon of atomic-scale migration fai-lure has gradually become a reliability problem that cannot be ignored in VLSI. Copper has a lower resistivity than aluminum and has better electromigration resistance. It is a new generation of reliable interconnect material, but there are still insufficient studies on atomic migration of copper interconnects. The present analytical mode of the electromigration reliability is mainly aimed at the single metal wire at a constant temperature. Although this method is relatively simple to calculate, it has little significance for the guiding of the actual situation. The main reasons are as follows: 1.It is the temperature gradient that exists in high-density integrated circuits in reliability. 2.The three-dimensional structure of the interconnection line has an important influence on the distribution of the temperature and electrical current of the interconnect. These parameters seriously affect the electromigration resistance of metal atoms. This work proposes a new modeling method of electromigration simulation, and establishes a classic three-dimensional Cu interconnect structure through COMSOL multiphysics software. The temperature, current density and stress distribution by a finite element simulation were carried out and better data simulation results were obtained. The results show that the current in the metal interconnection has serious siltation phenomenon on the inner side of the right angle, and the electromigration is most intense at the turning point of the interconnection line; the high temperature area is located between the inner and outer sides of the right angle, and the degree of thermal migration increases with the increase of temperature; the high-stress area is mainly at the outer edge of the interconnection line, but the stress migration accounts for a relatively small proportion of the overall electromigration, which can be ignored. In addition, the electromigration resistance of Cu is generally better than that of Ag, as Cu is an exceptional high-density integrated circuit conductor material.
作者简介: 张墅野,哈尔滨工业大学先进焊接与连接国家重点实验室讲师。2012年7月本科毕业于哈尔滨工业大学电子封装与技术专业。目前担任IMAPS国际电子封装学会Journal of Microelectronics and Electronic Packaging国际杂志副主编,IEEE可靠性技术委员会成员,2020年国际异构集成路线图成员. 主要从事柔性电子材料与封装可靠性的研究工作。以第一或通讯作者身份在IEEE Transactions on Components、Packaging and Manufacturing Technology、Microelectronics Reliability、Journal of Materials Science: Materials in Electronics、Journal of Alloys and Compounds等SCI/EI学术期刊发表研究论文40余篇,合著编写Lead Free Solders、Hybrid Nanomaterials等学术专著。曾获得首届国际柔性电子学术会议最佳墙报奖、2019年河南省科学技术进步二等奖(6/6)和中国机械工业科学技术科技进步三等奖(3/6)。 何鹏,教授,工学博士,博士研究生导师。现任哈尔滨工业大学先进焊接与连接国家重点实验室主任、材料科学与工程学院副院长。国家第三批“万人计划”科技创新领军人才。2014年当选ISO国际焊接标准化委员会委员,国际焊接学会标准化委员会委员。主攻方向为新材料及异种材料连接界面行为及控制,针对异种材料连接界面强化、应力缓解等问题从接头及界面的微观设计入手,连接工艺及接头性能控制等关键技术,取得了一系列具有较高理论和应用价值的创新性研究成果。获国家科技进步奖二等奖1项,教育部自然科学奖一等奖1 项,黑龙江省科学技术奖一等奖1项、二等奖2 项,机械工业科学技术一等奖2项、二等奖2项,河南省科学技术奖一等奖2项、二等奖1项,浙江省科学技术三等奖1 项;发表或合作发表学术论文300余篇。
引用本文:
张墅野, 鲍天宇, 修子扬, 何鹏. 三维封装电迁移Cu互连线的多物理场模拟仿真[J]. 材料导报, 2021, 35(2): 2133-2138.
ZHANG Shuye, BAO Tianyu, XIU Ziyang, HE Peng. Multi-physics Simulation of 3D Electromigration of Cu Interconnect. Materials Reports, 2021, 35(2): 2133-2138.
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2021, Vol. 35 
