Effect of Pt on the Electrical Properties of Indium Oxide Nanowire Field Effect Transistors
WU Liming1,2,3, XU Jinxia1,2,3,4, FAN Zhicheng1,2,3, MEI Fei1,2,3,4, ZHOU Yuanming1,2,3,4, LIU Lingyun1,2,3,4
1 Hubei Key Laboratory of Solar Power Generation and Energy Storage Operation Control, Hubei University of Technology, Wuhan 430068, China 2 Hubei Provincial Collaborative Innovation Center for Efficient Use of Solar Energy, Hubei University of Technology, Wuhan 430068, China 3 School of Electrical and Electronic Engineering, Hubei University of Technology, Wuhan 430068, China 4 College of Science, Hubei University of Technology, Wuhan 430068, China
Abstract: Indium oxide (In2O3) nanowire has great potential in transistor, storage and sensor applications owing to their suitable band width and high electron mobility. In this article, In2O3 nanowires were fabricated by simple chemical vapor deposition (CVD). Combining with electron beam lithography (EBL), In2O3 FETs (Field effect transistor, FET) were successfully prepared. Then, Pt was deposited on In2O3 FET with different thickness by sputtering system via different deposition time, and the effect of Pt on the electrical property of In2O3 FETs was investigated. The morphology, structure, optical properties and chemical valence of elements and composition of nanowires were characterized by SEM, XRD, PL and XPS. By analyzing the electrical performance of In2O3 FETs before and after Pt deposition, the threshold voltage (Vth) of FETs tends to drift to the right, the Ion/Ioff and carrier concentration are a bit decrease but the carrier mobility is a bit increase. The shift of Vth is attributed to the electron transfer in the metal and semiconductor system. In addition, the surface defects of nanowires act as the adsorption sites can adsorb oxygen and water molecules, which will capture free electrons from the nanowires, results in the decrease of the carrier concentration. The results show that the Pt metal nanoparticles can modulate the electrical properties of In2O3 FETs.
1 Duan X F, Niu C M, Sahi V, et al. Nature,2003, 425, 274. 2 Pescaglini A, Biswas S, Cammi D, et al.Physical Chemistry Chemical Physics,2017, 19(21), 14042. 3 Zhou W, Dai X, Lieber C M.Reports on Progress in Physics, 2017, 80(1),016701. 4 Ma R J, Zhao X, Zou X X, et al. Journal of Alloys and Compounds, 2018, 732, 863. 5 Yu Y, Majhi S M, Song H.Procedia Engineering,2016, 168, 227. 6 Lim T, Han J, Seo K, et al.Nanotechnology, 2015, 26(14), 145203. 7 Su M, Yang Z, Liao L, et al.Advanced Science. 2016, 3(9),1600078. 8 Li Q, Lu N, Wang L, et al.Small Methods,2018, 2(4), 1700263. 9 Liu Q, Liu Y, Wu F, et al.ACS Nano, 2018, 12(2), 1170. 10 Chen P,Yin X T, Que W X. In: Abstracts of the 5th Conference on new Generation Solar Cells(Perovskite Solar Cells). Beijing, 2018(in Chinese). 陈鹏,尹行天,阙文修.第五届新型太阳能电池学术研讨会摘要集(钙钛矿太阳能电池篇). 北京, 2018. 11 Zervos M, Vasile E, Vasile E, et al.Nanotechnology, 2017, 28(5), 54004. 12 Zhang Z, Wang S, Ding L, et al.Nano Letters, 2008, 8(11), 3696. 13 Yeom D, Keem K, Kang J, et al.Nanotechnology, 2008, 19, 265202. 14 Lin M C, Chu C J, Tsai L C, et al.Nano Letters, 2007, 7(12), 3656. 15 Ho J C, Yerushalmi R, Jacobson Z A, et al.Nature Materials, 2008, 7(1), 62. 16 Teweldebrhan D, Balandin A A.Applied Physics Letters, 2009, 94(1), 13101. 17 Zou X, Liu X, Wang C, et al.ACS Nano, 2012, 7(1), 804. 18 Zhang H, Meng Y, Song L, et al.Nano Research, 2018, 11(3), 1227. 19 Chang L, Dai C, Wu C.IEEE Electron Device Letters, 2019, 40(4), 534. 20 Peng M, Wu F, Wang Z, et al.Applied Physics Letters, 2019, 114(11), 111103. 21 Li W, Liao L, Xiao X, et al.Nano Research, 2014, 7(11), 1691. 22 Anand K, Kaur J, Singh R C, et al.Chemical Physics Letters, 2017, 682, 140. 23 Feng C, Liu X, Wen S, et al.Vacuum, 2019, 161, 328. 24 Liang C H, Meng G, Lei Y, et al.Advanced Materials, 2001, 13(17), 1330. 25 Wu P, Li Q, Zhao C X, et al.Applied Surface Science, 2008, 255(5), 3201. 26 Hafeez M, Zhai T, Bhatti A S, et al.Crystal Growth & Design, 2012, 12(10),4935. 27 Rumaiz A K, Ali B, Ceylan A, et al.Solid State Communications, 2007, 144(7-8),334. 28 Xu B, Li J, Liu L, et al.Chinese Journal of Catalysis. 2019, 40(5), 713. 29 Park H, Yoon K R, Kim S K, et al.Advanced Electronic Materials, 2016, 2(11), 1600218. 30 Peigney A, Laurent C, Flahaut E, et al.Carbon, 2001, 39(4), 507. 31 Lu G, Mao S, Park S, et al.Nano Research, 2009, 2(3), 192. 32 Li L, Lou Z, Shen G.ACS Applied Materials & Interfaces, 2015, 7(42), 23507. 33 Gu D, Dey S K, Majhi P.Applied Physics Letters, 2006, 89(8), 82907. 34 Yang X, Fu H, Tian Y, et al.Sensors and Actuators B: Chemical, 2019, 296, 126696. 35 Calarco R, Marso M, Richter T, et al.Nano Letters, 2005, 5(5), 981. 36 Wang D, Chang Y, Wang Q, et al.Journal of the American Chemical Society, 2004, 126(37), 11602. 37 Li Q H, Wan Q, Liang Y X, et al.Applied Physics Letters, 2004, 84(22), 4556. 38 Fan Z, Wang D, Chang P, et al.Applied Physics Letters,2004, 85(24), 5923. 39 Abliz A, Huang C, Wang J, et al.ACS Applied Materials & Interfaces, 2016, 8(12), 7862.
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2021, Vol. 35 
