Abstract: In this work, the interface and bulk MR of the Ag/p-Ge∶Ga/Ag device were investigated. The results show that the bulk MR is much larger than the interface MR. For the interface MR effects, the applied magnetic fields have little influence on the formation and quenching of the local plasma at the interface of Ag/p-Ge∶Ga, leading to a small interface MR. For the bulk MR effects, the carrier recombination rate is accelera-ted under the applied magnetic fields, and then the carriers concentration decreases sharply, resulting in a large MR value. Further study finds that the germanium-based semiconductor device with low carrier concentration is beneficial for obtaining an excellent bulk MR effect. We also studied the effect of different magnetic field orientations on the bulk MR, and find that the bulk MR become more anisotropic at lower temperature. When T<200 K, the values of bulk MR in the perpendicular orientation are much larger than that of in the parallel orientation. For example, when T=10 K, the largest value of bulk MR in the perpendicular orientation is about 123%@1 T, which is much larger than 41%@1 T in the parallel orie-ntation. Mechanism analysis indicates that the anisotropic characteristics is derived from the geometric effect which is enhanced due to the high carrier mobility characteristic at low temperature.
1 Grünberg P, Schreiber R, Pang Y, et al. Physical Review Letters, 1986, 57(19), 2442. 2 Baibich M N, Broto J M, Fert A, et al. Physical Review Letters, 1988, 61(21), 2472. 3 Miyazaki T, Tezuka N. Journal of Magnetism and Magnetic Materials, 1995, 139, L231. 4 Ikeda S, Hayakawa J, Ashizawa Y, et al. Applied Physics Letters, 2008, 93(8), 082508. 5 Yuasa S, Sato T, Tamura E, et al. Europhysics Letters, 2000, 52(3), 344. 6 Jin S, Tiefel T H, McCormack M, et al. Science, 1994, 264(5157), 413. 7 Guo X X, Dai S Y, Zhou Y L, et al. Applied Physics Letters, 1999 75(21), 3378. 8 He X, Sun Z G, Pang Y Y, et al. Journal of Applied Physics, 2017, 121(11), 114501. 9 Delmo M P, Yamamoto S, Kasai S, et al. Nature, 2009, 457, 1112. 10 Delmo M P, Shikoh E, Shinjo T, et al. Physical Review B, 2013, 87(24), 245301. 11 Porter N A, Marrows C H. Scientific Reports, 2012, 2, 565. 12 Wan C H, Zhang X Z, Gao X L, et al. Nature, 2011, 477(7364), 304. 13 Schoonus J J H M, Haazen P P J, Swagten H J M, et al. Journal of Physics D: Applied Physics, 2009, 42(18), 185011. 14 He X, He B, Yu H, et al. Journal of Applied Physics, 2019, 125(22), 224502. 15 Chen J J, Piao H G, Luo Z C, et al. Applied Physics Letters, 2015, 106(17), 173503. 16 Chen J J, Zhang X Z, Piao H G, et al. Applied Physics Letters, 2014, 105(19), 193508. 17 Chen J J, Zhang X Z, Luo Z C, et al. Journal of Applied Physics, 2014, 116(11), 114511. 18 Chen J J, Piao H G, Luo Z C, et al. Chinese Physics Letters, 2016, 33(4), 047501. 19 Huang Q K, Yan Y, Zhang K, et al. Scientific Reports, 2016, 6, 37748. 20 Zhang K, Li H H, Grünberg P, et al. Scientific Reports, 2015, 5, 14249. 21 Cheng B, Qin H W, Hu J F. Journal of Physics D: Applied Physics, 2017, 50, 445001. 22 Rentzsch R, Ionov A N. Physica Status Solidi (c), 2004, 1(1), 37. 23 Mitin V F, Dugaev V K, Ihas G G. Applied Physics Letters, 2007, 91(20), 202107. 24 Mitin V F, Kholevchuk V V, Soloviev E A. Applied Physics Letters, 2017, 110(1), 012102. 25 Luan X F. Acta Physica Sinica, 1965, 21(5), 1015(in Chinese). 栾心芙. 物理学报, 1965, 21(5), 1015. 26 He X, Sun Z G. Chinese Physics B, 2018, 27(6), 067204. 27 Sun Z G, Mizuguchi M, Manago T, et al. Applied Physics Letters, 2004, 85(23), 5643. 28 Ali M N, Xiong J, Flynn S, et al. Nature, 2014, 514(7521), 205. 29 Pletikosic＇ I, Ali M N, Fedorov A V, et al. Physical Review Letters, 2014, 113(21), 216601. 30 Velichko A V, Makarovsky O, Mori N, et al. Physical Review B, 2014, 90(8), 085309. 31 Wang K F, Graf D, Li L J, et al. Scientific Reports, 2014, 4, 7328. 32 Ahmad F R. Applied Physics Letters, 2015, 106(1), 012109.33 He X, Sun Z G. Materials Review A, 2017, 31(9), 6(in Chinese). 何雄, 孙志刚. 材料导报:综述篇, 2017, 31(9), 6.
渝公网安备50019002502923号 版权所有：《材料导报》编辑部
2021, Vol. 35 
