Effect of Ge on Novel Low-temperature Sintered ZnBiMnO Varistor Ceramics with Simplified Composition
CHEN Miaomiao1, ZHAO Ming1,2,*, CUI Chenghao1, LIU Zhuocheng3, CHEN Hua4, DU Yongsheng4, DENG Leibo4
1 School of Materials Science and Engineering, Inner Mongolia University of Science and Technology, Baotou 014010, Inner Mongolia, China 2 Inner Mongolia Key Laboratory of Advanced Ceramic Material and Devices, Baotou 014010, Inner Mongolia, China 3 School of Rare Earth Industry, Inner Mongolia University of Science and Technology, Baotou 014010, Inner Mongolia, China 4 School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, Inner Mongolia, China
Abstract: The effect of Ge on ZnO-based varistor ceramics is still not fully understood. Therefore, 0mol%—0.15mol% GeO2 doped ZnBiMnO varistor ceramics with simplified composition were prepared by solid-state sintering at 975 ℃ for 3 hours. On this basis, XRD, SEM and high-precision power source unit were employed to explore the effect of Ge content variations on the microstructure, and electrical nonlinearity of the prepared samples. The results indicate that the addition of GeO2 results in the formation of Bi24GeO38 as a new secondary phase, and a significant improvement in the electrical nonlinearity within the range of 0mol%—0.06mol%. The incorporation of mere 0.06mol% GeO2 makes ZnBiMnO varistor ceramic show its optimal electrical nonlinearity:the nonlinear coefficient α is as high as 49.4, the breakdown voltage EB is 338.10 V/mm, and the leakage current density JL is even lower than 6.09 μA/cm2. The results may offer a new alternative for the preparation of low-voltage ZnO-based varistors.
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2025, Vol. 39 
