Tm3+对AgNbO3反铁电陶瓷微结构和储能性能的影响

doi:10.11896/cldb.21090143

材料导报

2023, Vol. 37

Issue (6): 21090143-6 https://doi.org/10.11896/cldb.21090143

无机非金属及其复合材料

Tm³⁺对AgNbO₃反铁电陶瓷微结构和储能性能的影响

周创¹, 蔡苇^1,2,*, 陈大凯¹, 杨蕊如¹, 章恒¹, 陈刚^1,2

1 重庆科技学院冶金与材料工程学院,重庆 401331
2 纳微复合材料与器件重庆市重点实验室,重庆 401331

Effects of Tm³⁺ on Microstructure and Energy Storage Performance of AgNbO₃ Antiferroelectric Ceramics

ZHOU Chuang¹, CAI Wei^1,2,*, CHEN Dakai¹, YANG Ruiru¹, ZHANG Heng¹, CHEN Gang^1,2

1 School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China
2 Chongqing Key Laboratory of Nano/Micro Composite Materials and Devices, Chongqing 401331, China

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摘要 AgNbO₃无铅反铁电材料作为一种极具潜力的电介质储能材料,近年来受到了广泛的关注。然而,储能密度和储能效率较低,限制了它的应用。本工作研究了Tm³⁺对AgNbO₃陶瓷的微结构、介电性、铁电性和储能性能的影响。结果表明,Tm³⁺取代AgNbO₃陶瓷A位的Ag⁺,具有明显的细化晶粒的作用,增强了反铁电相的稳定性,使其储能性能显著提升。反铁电相稳定性的增强是由于Tm³⁺的引入降低了结构的容差因子和产生了Ag空位,破坏了阳离子位移和氧八面体倾斜等长程相互作用的结果。AgNbO₃-0.1%(原子分数)Tm₂O₃陶瓷在200 kV/cm下表现出优异的储能性能(可回收储能密度为3.32 J/cm³,储能效率为62.5%),在高功率脉冲电子器件中具有潜在的应用前景。

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关键词: AgNbO₃ 反铁电储能性能弛豫行为

Abstract: In recent years, AgNbO₃ lead-free antiferroelectric materials as the utmost potential dielectric storage materials have aroused a great concern. However, its lower energy storage density and energy storage efficiency limit its application. In this work, the effects of Tm³⁺ on the microstructure, dielectric, ferroelectric, and energy storage performance of AgNbO₃ ceramics have been investigated. These results show that the substitution of Tm³⁺ for Ag⁺ at A sites of AgNbO₃ ceramics can obviously refine the grain, and enhance the stability of the antiferroelectric phase so that its energy storage performance can significantly be improved. The enhanced stability of antiferroelectric phase is due to that the reduced tolerance factor and the formation of silver vacancy caused by the introduction of Tm³⁺can destroy the long-range interaction of cation displacement and oxygen octahedron tilt. AgNbO₃-0.1at% Tm₂O₃ ceramics exhibit excellent energy storage performance (the energy storage density and the energy storage efficiency measured at 200 kV/cm are 3.32 J/cm³ and 62.5%, respectively), which shows potential application prospects in high power pulse electronic devices.

Key words: AgNbO₃ antiferroelectric energy storage performance relaxor

出版日期: 2023-03-25 发布日期: 2023-03-27

ZTFLH:

TM22+5

基金资助: 重庆市高校创新研究群体项目(CXQT19031);重庆市科技创新领军人才支持计划(CSTCCXLJRC201919);国家级大学生创新创业训练计划项目(202011551001);重庆科技学院研究生科技创新训练计划项目(YKJCX2020219);重庆市科慧杯研究生创新创业大赛项目(10111043)

通讯作者: *蔡苇,博士,重庆科技学院冶金与材料工程学院教授、硕士研究生导师。2011年于重庆大学获博士学位,2014年作为美国罗格斯大学访问学者交流学习。主要从事电磁功能材料及铁电新能源材料研究,以第一作者/通信作者发表学术论文101篇(SCI收录64篇),获授权发明专利25项。caiwei_cqu@163.com

作者简介: 周创,重庆科技学院冶金与材料工程学院硕士研究生。研究方向为电介质储能材料微结构和电性能调控。

引用本文:

周创, 蔡苇, 陈大凯, 杨蕊如, 章恒, 陈刚. Tm³⁺对AgNbO₃反铁电陶瓷微结构和储能性能的影响[J]. 材料导报, 2023, 37(6): 21090143-6.
ZHOU Chuang, CAI Wei, CHEN Dakai, YANG Ruiru, ZHANG Heng, CHEN Gang. Effects of Tm³⁺ on Microstructure and Energy Storage Performance of AgNbO₃ Antiferroelectric Ceramics. Materials Reports, 2023, 37(6): 21090143-6.

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http://www.mater-rep.com/CN/10.11896/cldb.21090143 或 http://www.mater-rep.com/CN/Y2023/V37/I6/21090143

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