区熔用多晶硅棒制备技术浅析

材料导报

2020, Vol. 34

Issue (Z2): 152-156

无机非金属及其复合材料

区熔用多晶硅棒制备技术浅析

陈辉^1,2, 严大洲^1,3, 万烨^1,3, 孙强^1,3, 张邦洁^1,3

1 洛阳中硅高科技有限公司,洛阳 471023
2 多晶硅材料制备技术国家工程实验室,洛阳 471023
3 中国恩菲工程技术有限公司,北京 100038

Brief Analysis on the Preparation Technology of Polysilicon Rod for Zone Melting

CHEN Hui^1,2, YAN Dazhou^1,3, WAN Ye^1,3, SUN Qiang^1,3, ZHANG Bangjie^1,3

1 China Silicon Corporation Ltd.,Luoyang 471023, China
2 National Key Engineering Laboratory for Polysilicon Production, Luoyang 471023, China
3 China ENFI Engineering Co., Ltd., Beijing 100038, China

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摘要区熔多晶硅产品纯度要达到13N以上,同时硅棒要满足各项性能指标要求。由于研制周期长、制备难度大,国外工艺技术完全封锁,而国内多晶硅产业起步较晚,对高纯度产品质量的过程管控、工艺技术路线及检测分析方法等基础性研究薄弱。本文重点分析了硅烷CVD法和改良西门子法制备区熔用多晶硅的技术路线,从产品原料控制、核心设备结构、关键材料、反应机理等方面进行了综合分析,在总结不同工艺路线特点的基础上对区熔多晶硅相关领域的发展前景进行了展望。

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	陈辉
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关键词: 区熔多晶硅 CVD反应器

Abstract: The purity of the zone melt polysilicon should be more than 13N, and the silicon rod should meet the requirements of each performance index. Because of the long development period and the difficulty of preparation, under the condition of complete blockade of foreign technology, the domestic polycrystalline silicon industry starts late, and basic research on process control, process technology route and detection and analysis method of high purity product quality is weak. In this paper, the technological routes of preparing zone melt polysilicon by silane CVD method and modified Siemens method are mainly analyzed. From the aspects of raw material control, core equipment structure, key materials, reaction mechanism, etc., a comprehensive analysis is made. On the basis of comparing the characteristics of different process routes, the development of related fields of zone melt polysilicon is prospected.

Key words: zone melting polysilicon CVD reactor

出版日期: 2020-11-25 发布日期: 2021-01-08

ZTFLH:

TQ127.2

基金资助: 2016年工业强基工程项目(0714-EMTC02-5593/13)

通讯作者: Chenh@sinosico.com

作者简介: 陈辉,洛阳中硅高科技有限公司工程师,2010年至2019年期间,作为项目核心研究人员,先后参与国家科技部“十二五”科技支撑计划2项,国家工信部电子信息产业发展基金项目2项,工业强基工程项目1项,河南省重大科技专项1项;作为项目负责人主持完成洛阳市科技计划项目7项。申请专利4项,完成成果鉴定3项(其中两项技术达到国际先进水平);获得河南省科学技术进步一等奖1项,洛阳市科学技术进步一等奖1项;研究工作主要围绕半导体硅基材料,开展高纯多晶硅及电子芯片用高纯气体技术研究。

引用本文:

陈辉, 严大洲, 万烨, 孙强, 张邦洁. 区熔用多晶硅棒制备技术浅析[J]. 材料导报, 2020, 34(Z2): 152-156.
CHEN Hui, YAN Dazhou, WAN Ye, SUN Qiang, ZHANG Bangjie. Brief Analysis on the Preparation Technology of Polysilicon Rod for Zone Melting. Materials Reports, 2020, 34(Z2): 152-156.

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http://www.mater-rep.com/CN/ 或 http://www.mater-rep.com/CN/Y2020/V34/IZ2/152

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