Study on Layered MoS2 Films Grown by Chemical Vapor Deposition at Relatively Low Temperatures
SU Wenjing1,2, JIN Liangmao1,2, JIN Kewu1,2, WANG Tianqi1,2, TANG Yongkang1,2, GAN Zhiping1,2
1 (CNBM)Bengbu Design ＆ Research Institute for Glass Industry Co., Ltd, Bengbu 233018 2 State Key Laboratory for Advanced Technology of Float Glass, Bengbu 233018
Abstract: MoS2 is 2D layered transition metal dichalcogenides (TMDs), which has a layered structure similar to graphene, has been widely investigated. MoS2 will turn to a direct band gap semiconductor with a bandgap as high as 1.9 eV when reduced to a single-layered structure, and it also has a strongly enhanced photoluminescence effect and excellent nano- and opto-electronic properties, this makes single layer MoS2 a promising material for the next generation of nanoelectronics and optoelectronics and also a potential material for highly efficient photo catalytic H2 generation. As for preparation, chemical vapor deposition has been the most commonly used method for layered MoS2 growth. However, it is usually performed under a high temperature ranged around 850—1 000 ℃, which is very energy consumed. Here we explored the relatively low temperature situation, and have grown layered MoS2 films by chemical vapor deposition under the temperature under 650 ℃, 675 ℃, 700 ℃, 725 ℃ and 750 ℃. The as prepared samples were characterized with optical microscope (OM) and Raman spectroscopy. The results show that MoS2 can be grown under a temperature even low as 650 ℃, and the MoS2 triangles grown under 725 ℃ have the largest average area and the best morphology. The results of this experiment show that it is possible to grow MoS2 few layered films under a relatively low temperature, which would save more energy and be economic.
苏文静, 金良茂, 金克武, 王天齐, 汤永康, 甘治平. 化学气相沉积法较低温度下制备层状硫化钼薄膜的研究[J]. 材料导报, 2019, 33(z1): 158-160.
SU Wenjing, JIN Liangmao, JIN Kewu, WANG Tianqi, TANG Yongkang, GAN Zhiping. Study on Layered MoS2 Films Grown by Chemical Vapor Deposition at Relatively Low Temperatures. Materials Reports, 2019, 33(z1): 158-160.
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2019, Vol. 33 
