Progress of Schottky Contact Model and Carrier Transport Mechanism at the Interface Between Metal and Semiconductor
LI Yapeng1, LI Yingfeng2, HE Zhirong1, GUO Congsheng1, YAN Qunmin2, XU Feng1
1 School of Materials Science and Engineering, Shaanxi Sci-Tech University, Hanzhong 723001; 2 School of Electrical Engineering, Shaanxi Sci-Tech University, Hanzhong 723001;
Abstract: Schottky contact was an important application in the field of the rectifier and photoelectric detection, due to its excellent rectifying behavior. In this paper, the formation mechanism, together with corresponding mathematical model and influencing factors of the Schottky contact between metal and semiconductor was reviewed in detail. The literatures showed that the formation of Schottky contact was caused by Fermi level pinning which was caused by phase formation and the existence of polarization at the interface region. Meanwhile, the thermionic emission model was the most widely used to explain the carrier transport mechanism at the interface of Schottky contact. With the further study on the carrier transport mechanism at the interface contact, the thermio-nic-diffusion and thermal field emission model were proposed by researchers. In addition, the related research exhibited that the fast annealing can lead to atoms diffusion, rearrangement and phase formation at the interface of the Schottky contact, which has an important influence on the stability of Schottky contact.
李亚鹏, 李颖峰, 贺志荣, 郭从盛, 闫群民, 徐峰. 金属与半导体肖特基接触势垒模型及其载流子传输机制的研究进展[J]. 《材料导报》期刊社, 2017, 31(3): 57-62.
LI Yapeng, LI Yingfeng, HE Zhirong, GUO Congsheng, YAN Qunmin, XU Feng. Progress of Schottky Contact Model and Carrier Transport Mechanism at the Interface Between Metal and Semiconductor. Materials Reports, 2017, 31(3): 57-62.
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