直拉法单晶硅生长原理、工艺及展望

doi:10.11896/cldb.22100160

材料导报

2024, Vol. 38

Issue (9): 22100160-13 https://doi.org/10.11896/cldb.22100160

无机非金属及其复合材料

直拉法单晶硅生长原理、工艺及展望

王正省¹, 任永生^1,2,*, 马文会^1,*, 吕国强¹, 曾毅¹, 詹曙³, 陈辉², 王哲⁴

1 昆明理工大学冶金与能源工程学院,昆明 650093
2 东京大学材料工程学院,东京 113-8656
3 合肥工业大学计算机与信息学院,合肥 230601
4 北京科技大学钢铁冶金新技术国家重点实验室,北京 100083

Principle, Process and Prospect of Monocrystalline Silicon Growth with Czochralski Method

WANG Zhengxing¹, REN Yongsheng^1,2,*, MA Wenhui^1,*, LYU Guoqiang¹, ZENG Yi¹, ZHAN Shu³, CHEN Hui², WANG Zhe⁴

1 Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China
2 Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
3 School of Computer and Information, Hefei University of Technology, Hefei 230601, China
4 State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, Beijing 100083, China

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摘要碳达峰、碳中和理念提出后,太阳能作为一种可再生绿色能源备受关注。单晶硅作为主要的光伏材料,其质量决定着太阳能电池效率的高低,为了降低成本和提高产能,人们对单晶硅提出越来越高的要求。直拉法(CZ法)是单晶硅的主要制备方法,其生产效率高,可实现自动化,直拉单晶硅市场占比超过90%,目前正朝着大尺寸、N型、薄片化、低氧低碳的方向发展。然而随着晶棒尺寸增大,热场变化更加复杂,现有CZ工艺难以满足市场需求。未来降低度电成本仍是晶硅光伏发展的驱动力,应通过技术革新、产业标准化、成本控制等手段推动光伏产业发展。本文介绍了CZ法生长单晶硅的基本原理和生长工艺,分别对缺陷控制、热场优化、氧含量控制等进行了分析,在总结工艺现状和单晶生长特点的基础上对直拉法生长单晶硅的发展方向进行了展望。

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	王正省
	任永生
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	曾毅
	詹曙
	陈辉
	王哲

关键词: 直拉法单晶硅大尺寸薄片化热场太阳能

Abstract: With the introduction of the concept of peak carbon dioxide emission and carbon neutrality, solar energy as a renewable green energy has attracted much attention. Monocrystalline silicon is main photovoltaic material, and its quality determines the efficiency of solar cells. High-quality monocrystal silicon is required to reduce costs and increase production capacity. Czochralski (CZ) method is main preparation method for monocrystalline silicon, with high production efficiency and automation. The market share of CZ-Si exceeds 90%. At present, it is developing toward large size, N-type, flake, low oxygen, and low carbon. However, as the size of crystal rod increases, the thermal field changes become more complex, and the existing CZ process is difficult to meet the market demand. In the future, reducing the cost of kilowatt-hour electricity is still the driving force for the development of crystalline silicon photovoltaic, and the development of photovoltaic should be promoted through technological innovation, industrial standardization, cost control, and other means. In this paper, the basic principle and growth process of monocrystalline silicon using CZ are first summarized. Defect control, thermal field optimization, and oxygen content control are analyzed. Finally, the process and future prospects of developing monocrystalline silicon using CZ are presented.

Key words: Czochralski method monocrystalline silicon large size flake thermal field solar energy

出版日期: 2024-05-10 发布日期: 2024-05-13

ZTFLH:

O782

基金资助: 云南省科技厅重大研发计划基金(202103AA080010;202102AB080016);国家自然科学基金青年基金(52104303);云南省科技厅-昆明理工大学创建“双一流”联合基金面上项目(202201BE070001-045);国家自然科学基金云南联合基金项目(U1702251);北京科技大学钢铁冶金新技术国家重点实验室基金项目(KK21-07)

通讯作者: * 任永生,日本东京大学博士,昆明理工大学冶金与能源工程学院副教授、硕士研究生导师。博士毕业(国家公派留学,文部省奖学金)后曾留校东京大学担任教职员。2020年归国到昆明理工大学工作,主要从事:(1)硅冶金与硅材料;(2)铝合金熔体净化;(3)高熵合金制备及新应用等研究,发表学术期刊论文40余篇,包括Separation and Purification Technology、ACS Sustainable Chemistry & Engineering、Crystal Growth & Design、Vacuum、Green Chemistry等。申请专利10余项,授权专利5项。ryssdy@126.com
马文会,云南大学党委副书记、常务副校长,昆明理工大学教授、博士研究生导师,国家高层次人才特聘教授、国家“万人计划”科技创新领军人才,云南省硅冶金与材料技术研究创新团队负责人。长期从事有色金属真空冶金、工业硅生产、多晶硅制备新技术及新能源材料制备等领域的研究。先后主持和参与国家自然科学基金、国家科技支撑计划、国际合作项目以及企业委托项目等50余项。获国家技术发明二等奖1项,省部级科技奖一等奖5项、二等奖1项;以第一作者或通信作者发表高水平SCI论文360余篇,申请国家发明专利100余项,获授权72项,出版学术专著或教材4部。mawenhui@ynu.edu.cn

作者简介: 王正省,2021年6月毕业于昆明理工大学,获工学学士学位。现为昆明理工大学冶金与能源工程学院在读硕士研究生,在马文会教授、任永生副教授的指导下进行直拉法生长单晶硅数值模拟与热场优化的研究,授权专利3项,在International Journal of Heat and Mass Transfer、Journal of Alloys and Compounds、Vacuum等期刊上发表SCI论文4篇。

引用本文:

王正省, 任永生, 马文会, 吕国强, 曾毅, 詹曙, 陈辉, 王哲. 直拉法单晶硅生长原理、工艺及展望[J]. 材料导报, 2024, 38(9): 22100160-13.
WANG Zhengxing, REN Yongsheng, MA Wenhui, LYU Guoqiang, ZENG Yi, ZHAN Shu, CHEN Hui, WANG Zhe. Principle, Process and Prospect of Monocrystalline Silicon Growth with Czochralski Method. Materials Reports, 2024, 38(9): 22100160-13.

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https://www.mater-rep.com/CN/10.11896/cldb.22100160 或 https://www.mater-rep.com/CN/Y2024/V38/I9/22100160

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