二维忆阻材料及其阻变机理研究进展

doi:10.11896/cldb.21040128

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Abstract Due to the ultra-thin and flexible layered structure, two-dimensional (2D) materials are expected to break through the limitation of traditional resistive materials in reducing memristor size,and thus become the research hotspot in the field of resistive memory, flexible electronic device, neuromorphic computing, etc. In this paper, the research progress of 2D-materials-based memristors is reviewed from the aspects of device structure, material type, switching mechanism, electrode, functional layer modification, etc. The sandwich-structure is the most commonly used structure for memristor, and its device switching performance can be improved by inserting regulating layer. Although planar-structure memristor shows poor switching properties, it has advantage of easy observation and is conducive to the investigation of switching mechanism. Graphene and its derivatives are the most widely studied 2D memristive materials, as well as molybdenum disulfide. The application of other 2D materials (such as WS₂, MoTe₂, h-BN, black phosphorus, MXene, perovskites, etc.) in memristors and their switching performances have also been summarized and analyzed. The device switching mechanisms mainly include conductive filaments, charge trapping/detrapping and atom vacancy. It is found that the interfacial barrier and charge transport can be effectively controlled by selecting the electrode with appropriate work function. Besides, the dispersion of the device switching performance can be reduced by combining the 2D material with polymer or nanoparticles. What still needs hard work is to engineer the interfacial properties, especially under bending conditions or extreme temperatures. New and preferable 2D memristive materials need to be further explored to realize industrial application.

Key words： memristor two-dimensional material switching mechanism functional layer modification

Published: 10 November 2022 Online: 2022-11-03

CLC number:	TB32
	TB34

Fund:Natural Science Foundation of Anhui Province (2008085QE224), China Postdoctoral Science Foundation (2019M662140) and Fundamental Research Funds for the Central Universities of Ministry of Education of China (JZ2020HGTA0047).

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	CAO Qing
	XIONG Limiao
	LI Pengcheng

Cite this article:

CAO Qing,XIONG Limiao,LI Pengcheng. Recent Research Progress of Two-Dimensional Memristive Materials and Its Resistance Switching Mechanism[J]. Materials Reports, 2022, 36(21): 21040128-12.

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http://www.mater-rep.com/EN/10.11896/cldb.21040128 OR http://www.mater-rep.com/EN/Y2022/V36/I21/21040128

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