非线性晶体和光电材料硒化镓的研究进展

doi:10.11896/cldb.20080191

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Abstract Mid-far infrared lasers and optoelectronic devices are widely used in military and civilian fields. Mid-far infrared nonlinear optical crystals are becoming more and more important as the core component of mid-far infrared lasers, and gallium selenide (GaSe) is a mid-far infrared nonlinear optical crystal with excellent comprehensive performance. In addition, based on their excellent photoelectric properties, it is more importance for two-dimensional GaSe to use in optoelectronic devices (such as photodetectors).
Although GaSe has many advantages and great application prospects in the mid-far infrared, the growth technology of GaSe single crystals with high optical quality and large size still needs further research. Both synthetic and growth methods of GaSe have been continuously improved, through the efforts of domestic and foreign researchers. Since Se is volatile, it is very important to control the stoichiometric ratio of GaSe. The ways of regulation are: (i) adjust the stoichiometric ratio by supplementing Se vapor to balance the Se vapor pressure; (ii) suppress the volatilization of Se by limiting the free space of Se vapor to effectively. Secondly, it is difficult to cut and process for the soft hardness of GaSe, which could account for the important reason that affecting its wide commercial application. To improving the hardness of GaSe, scholars have done a lot of doping research, which could reveal that both the hardness of GaSe crystal and optical performance improved by doping. In terms of two-dimensional GaSe, although two-dimensional GaSe nanometer tablets have been prepared by various methods and good research results have been achieved in electronics, photoelectric devices and other aspects, such as ultraviolet and infrared high responsivity photodetectors, gas sensors, flexible optoelectronic devices and photoelectrochemical electrodes, etc. It is still difficult to obtain two-dimensional GaSe materials with high quality, large size and controllable thickness.
Firstly this article briefly introduces the structure and properties of GaSe. Then, the preparation of GaSe materials, doping research, mid-far infrared and terahertz (THz) band applications, and research progress in the fields of electronic devices and optoelectronic devices are reviewed from the two aspects of GaSe bulk and two-dimensional materials. Finally, the future research and application of GaSe are prospected.

Key words： mid-far infrared GaSe nonlinear optical crystal optoelectronic device two-dimensional material

Published: 10 March 2022 Online: 2022-03-08

CLC number:	O782
	TN29

Fund:Chunhui Plan Project of the Ministry of Education(12201519), Department of Science and Technology Project of Sichuan (13201657).

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	DU Hui
	CHEN Qiao
	LIU Ting
	HE Yi
	JIN Yingrong

Cite this article:

DU Hui,CHEN Qiao,LIU Ting, et al. Research Progress of Nonlinear Crystal and Optoelectronic Material GaSe[J]. Materials Reports, 2022, 36(5): 20080191-10.

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http://www.mater-rep.com/EN/10.11896/cldb.20080191 OR http://www.mater-rep.com/EN/Y2022/V36/I5/20080191

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