Materials Reports  2019, Vol. 33 Issue (z1): 161-164 |
| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Effect of SiO2 Doping Concentrations on the Microstructure and Properties of ZnO-based Varistor Ceramics |
| CHEN Yongjia1, LIU Jianke2
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1 Shaanxi Institute of Technology, Xi’an 710300
2 School of Arts and Sciences, Shaanxi University of Science and Technology, Xi’an 710021 |
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Abstract The influences of SiO2 doping concentrations on the microstructures and electrical properties of (96.0-x)ZnO-2.0Pr6O11-0.5Sb2O3-0.5Co2O3-0.5Cr2O3-0.5Y2O3-xSiO2 system varistor ceramics had been researched in detail, wherein x was 0.0%, 0.8%, 1.6%, 2.4% respectively, and all the proportion were as molar presents. The results showed that the lattice structure of the main crystal phase was hexagonal wurtzite structure. With the increase of SiO2 concentrations, the three strong diffraction peaks of ZnO varistor ceramics moved to lower angles gradually, the average grain size decreased at first and then increased. As the SiO2 concentration was 1.6%, the following results were obtained: The average grain size reached the minimum value of 1.5 μm; the breakdown field strength E1mA was 385.6 V/mm and nonlinear coefficient α reached the maximum value of 84.2; the leakage current IL reached the minimum value of 1.1 μA. The above phenomena were explained systematically by analyzing the sintering mechanism, formation mechanism of solid solution and principle of lowest energy.
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Published: 05 July 2019
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| About author:: Yongjia Chen, assistant, master candidate, is mainly engaged in the deformation of semiconductor functional materials and devices |
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