冷轧高纯钽板退火过程中微观组织及织构演变的梯度效应

doi:10.11896/j.issn.1005-023X.2018.20.018

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Abstract 135° clock-rolled Ta plates with 87% thickness reduction were annealed at 1 323 K for different time (5 min, 10 min, 30 min, 60 min, 90 and 120min, respectively). The through-thickness microstructure evolution was systematically studied by electron back-scattered diffraction (EBSD), X-ray diffraction (XRD) and microhardness techniques. It was revealed that the recrystallization nucleus preferred to appear in the central region dominated by high angle boundary nucleation mechanism in this process. However, subgrain nuclear mechanism played an important role in the nucleation of near surface zone. Besides, the center area showed faster recrystallization kinetics than the near surface area, and after recrystallization, the center of {111}〈uvw〉(〈111〉∥ND)texture was stronger whereas the near surface possessed much more {100}〈uvw〉(〈100〉∥ND). Such a difference was mainly contributed to the strong {111} texture of the center layer possessing high stored energy as well as its severe fragmentation of internal grain. On the contrary, {100} texture accounting for a large proportion of the near surface zone, which contained lower stored energy and small internal misorientations, led to a longer incubation period for recrystallization nucleation. As a result, the recrystallization texture gradient along the thickness direction appeared.

Key words： high purity tantnlum annealing time microstructure high angle boundary nucleation mechanism subgrain nucleation mechanism texture stored energy

Published: 22 November 2018

CLC number:

TG146.4+16

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	Articles by authors
	ZHU Jialin
	LIU Shifeng
	LIU Yahui
	JI Jingli
	LI LiJuan

Cite this article:

ZHU Jialin,LIU Shifeng,LIU Yahui, et al. Gradient of Microstructure and Texture Evolution of Cold Rolled High Purity Tantalum Plate During Annealing Process[J]. Materials Reports, 2018, 32(20): 3595-3600.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.20.018 OR http://www.mater-rep.com/EN/Y2018/V32/I20/3595

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