氮化铟薄膜的p型掺杂和铁磁性研究进展*

doi:10.11896/j.issn.1005-023X.2017.07.008

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Abstract Ⅲ-nitride (InN, GaN and AlN) semiconductors have been widely used in the field of microwave and optoelectronic devices due to their unique band structure and properties. Among them, the researches and developments on InN-based materials and devices have been recognized as the key points to promote the modern optoelectronic technology. Moreover, extensive new fundamental studies have been focused on p-type conduction and room temperature ferromagnetism studies in InN. This paper first gives a brief introduction to the crystal structure and the growth methods of InN film, and analyze the challenges encountered in its development. Then we mainly concentrate on the recent development in InN research about p-type conduction and ferromagnetism. At the same time, the related researches studied in our group are presented. Finally, a short conclusion and expectation is given.

Key words： indium nitride p-type doping ferromagnetism film preparation

Published: 08 May 2018

CLC number:

O472

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	Articles by authors
	LI Yunyi
	WANG Wei
	LIU Zhijun
	GONG Wei
	XIE Qiyun

Cite this article:

LI Yunyi,WANG Wei,LIU Zhijun, et al. Development of InN Film on p-Type Doping and Ferromagnetism[J]. Materials Reports, 2017, 31(7): 54-58.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.07.008 OR http://www.mater-rep.com/EN/Y2017/V31/I7/54

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