稀磁掺杂MnxGe1-x量子点的制备及应用

doi:10.11896/j.issn.1005-023X.2018.13.006

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Abstract As a new kind of diluted magnetic semiconductor materials, the study on spintronics properties of the Mn_xGe_1-x quantum dots have made a great breakthrough in recent years. The current preparation method of the diluted magnetic doping Mn_xGe_1-x quantum dots and its related magnetic properties have been well discussed. The interaction between Mn ion and growth surface, morphology evolution, and attempts for spintronics application based on such nanomaterials have also been introduced in detailed. At the end of this article, we focus on the key spot of the research and the problems that need to be solved for the application of Mn_xGe_1-x quantum dots in the near future.

Key words： Mn_xGe_1-x quantum dots doping ferromagnetism Cuire temperature

Published: 01 August 2018

CLC number:

TB332

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	Articles by authors
	LI Guangyang
	YANG Jie
	QIU Feng
	WANG Rongfei
	WANG Chong
	YANG Yu

Cite this article:

LI Guangyang,YANG Jie,QIU Feng, et al. Preparation and Application of Dilute Magnetic Doping of Mn_xGe_1-x Quantum Dots[J]. Materials Reports, 2018, 32(13): 2176-2182.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.13.006 OR http://www.mater-rep.com/EN/Y2018/V32/I13/2176

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