N掺杂Cu<sub>2</sub>O薄膜的低温沉积及快速热退火研究<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.016.005

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Abstract The N-doped Cu₂O (Cu₂O∶N) thin films were deposited by radio frequency magnetron sputtering a Cu₂O target in N₂and Ar mixture atmosphere, and then the as-deposited Cu₂O∶N thin films were annealed by rapid thermal annealing (RTA) in N₂ atmosphere. Effects of N₂ flow rates and annealing temperatures on growth behaviour, crystalline structures, surface morphologies,optical and electrical properties of Cu₂O∶N thin films were investigated. The results showed that the as-deposited thin film grown at 300 ℃ substrate temperature contained only single phase of Cu₂O under 12 sccm N₂ flow rate. The RTA process had no influence on the crystalline structures of the as-deposited thin films in N₂ atmosphere, but the crystalline quality of thin films could be sharply improved by rising annealing temperature (< 450 ℃). The thin film annealed at 400 ℃ showed good electrical properties—a Hall mo-bility (μ) of 27.8 cm²·V^-1·s^-1 and a resistivity (ρ) of 2.47×10³ Ω·cm, which were attributed to the mitigated scattering of photo-generated carriers and the enhanced carriers transport, both induced by the improvement of crystalline quality and defect states of thin film as results of RTA. Our experiments indicated the effectiveness of low temperature sputtering deposition and RTA treatment on improving the photoelectric properties of Cu₂O∶N thin films.

Key words： copper (Ⅰ) oxide N₂ flow rate low temperature deposition rapid thermal annealing (RTA) photoelectric property

Published: 07 May 2018

CLC number:

TB34

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	Articles by authors
	ZI Xingfa
	YE Qing
	LIU Ruiming
	CHENG Man
	HUANG Wenqing
	HE Yongtai

Cite this article:

ZI Xingfa,YE Qing,LIU Ruiming, et al. Study on N-doped Cu₂O Thin Film Fabricated by Low Temperature Deposition and Rapid Thermal Annealing[J]. Materials Reports, 2017, 31(16): 21-25.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.016.005 OR http://www.mater-rep.com/EN/Y2017/V31/I16/21

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